TY - JOUR
T1 - Impact of Solvent Additive on Carrier Transport in Polymer:Fullerene Bulk Heterojunction Photovoltaic Cells
AU - Ho, Carr Hoi Yi
AU - Dong, Qi
AU - Yin, Hang
AU - Leung, Winky Wing Ki
AU - Yang, Qingdan
AU - Lee, Harrison Ka Hin
AU - Tsang, Sai Wing
AU - So, Shu Kong
PY - 2015/8/1
Y1 - 2015/8/1
N2 - The effects of a solvent additive, 1,8-diiodooctane (DIO), on both hole and electron transport are investigated in a state-of-the-art bulk-heterojunction (BHJ) system, namely PTB7:PC71BM. For a polymer:fullerene weight ratio of 1:1.5, the electron mobility in the blend film increases by two orders of magnitude with the DIO concentration while almost no change is found in the hole mobility. For lower DIO concentrations, the electron mobility is suppressed because of large, but poorly connected PC71BM domains. For higher concentrations of DIO, the electron mobility is improved progressively and the hole mobility becomes the limiting factor. Between 1 and 5 vol%, the electron and hole mobilities are balanced. Using the Gaussian disorder model (GDM), we found that the DIO concentration modifies fundamentally the average hopping distances of the electrons. In addition, there exist alternative donor-acceptor ratios to achieve optimized PTB7:PC71BM based solar cells. It is demonstrated that the fullerene content of the BHJ film can be significantly reduced from 1:1.5 to 1:1 while the optimized performance can still be preserved.
AB - The effects of a solvent additive, 1,8-diiodooctane (DIO), on both hole and electron transport are investigated in a state-of-the-art bulk-heterojunction (BHJ) system, namely PTB7:PC71BM. For a polymer:fullerene weight ratio of 1:1.5, the electron mobility in the blend film increases by two orders of magnitude with the DIO concentration while almost no change is found in the hole mobility. For lower DIO concentrations, the electron mobility is suppressed because of large, but poorly connected PC71BM domains. For higher concentrations of DIO, the electron mobility is improved progressively and the hole mobility becomes the limiting factor. Between 1 and 5 vol%, the electron and hole mobilities are balanced. Using the Gaussian disorder model (GDM), we found that the DIO concentration modifies fundamentally the average hopping distances of the electrons. In addition, there exist alternative donor-acceptor ratios to achieve optimized PTB7:PC71BM based solar cells. It is demonstrated that the fullerene content of the BHJ film can be significantly reduced from 1:1.5 to 1:1 while the optimized performance can still be preserved.
KW - admittance spectroscopy
KW - bulk heterojunction
KW - carrier transport
KW - photovoltaics
KW - solvent additives
UR - http://www.scopus.com/inward/record.url?scp=84939457367&partnerID=8YFLogxK
U2 - 10.1002/admi.201500166
DO - 10.1002/admi.201500166
M3 - Journal article
AN - SCOPUS:84939457367
SN - 2196-7350
VL - 2
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
IS - 12
M1 - 1500166
ER -