Hydrogenated aluminium-doped zinc oxide semiconductor thin films for polymeric light-emitting diodes

Keyphrases

• Hydrogenated 100%
• Aluminum Film 100%
• Aluminum-doped Zinc Oxide 100%
• Semiconductor Thin Films 100%
• Oxide Semiconductor 100%
• Polymeric Light-emitting Diodes 100%
• Hydrogen Partial Pressure 66%
• Room Temperature 33%
• Phenyl 33%
• Transmittance 33%
• Visible Spectrum 33%
• Indium Tin Oxide 33%
• Sulfonate 33%
• PEDOT 33%
• Control Device 33%
• Hole Transport Layer 33%
• Electroluminescence Performance 33%
• Light-emitting Layer 33%
• Optical Band Gap 33%
• Tin Oxide Anode 33%
• Polyethylene 33%
• Surface Roughness 33%
• Shallow Donor 33%
• Diode 33%
• Wavelength Regions 33%
• Highly Conducting 33%
• Poly(p-phenylene vinylene) 33%
• Argon Gas 33%
• Gas Mixture 33%
• RF Sputtering Method 33%
• Doping Efficiency 33%
• Zinc Oxide ZnO 33%
• Transparent Thin Film 33%
• Aluminum Doping 33%
• Polycrystalline ZnO 33%
• Hydrogen Gas 33%
• Polystyrene Sulfonic Acid 33%

Engineering

• Thin Films 100%
• Light-Emitting Diode 100%
• Aluminum Film 100%
• Aluminium-Doped Zinc Oxide 100%
• Oxide Semiconductor 100%
• Hydrogen Partial Pressure 66%
• Radio Frequency 33%
• Band Gap 33%
• Room Temperature 33%
• Critical Role 33%
• Luminaires 33%
• Indium-Tin-Oxide 33%
• Emitting Light 33%
• Desired Property 33%
• Polycrystalline 33%
• Polymeric Layer 33%
• Hydrogen Gas 33%
• Magnetron 33%
• Gas Mixture 33%

Material Science

• Aluminum 100%
• Light-Emitting Diode 100%
• Thin Films 100%
• Zinc Oxide 100%
• Oxide Semiconductor 100%
• ZnO 57%
• Film 42%
• Anode 28%
• Electroluminescence 14%
• Indium Tin Oxide 14%
• Control Component 14%
• Polyethylene 14%
• Magnetron Sputtering 14%
• Surface Roughness 14%
• Polyphenylene 14%
• Gas Mixture 14%