Hydrogenated aluminium-doped zinc oxide semiconductor thin films for polymeric light-emitting diodes

Engineering & Materials Science

• Zinc oxide 100%
• Oxide semiconductors 89%
• Light emitting diodes 74%
• Thin films 71%
• Aluminum 58%
• Hydrogen 40%
• Partial pressure 29%
• Optical band gaps 25%
• Anodes 24%
• Electroluminescence 19%
• Tin oxides 17%
• Magnetron sputtering 16%
• Indium 16%
• Transport Layer 15%
• Gas mixtures 14%
• Argon 14%
• Doping (additives) 14%
• Polyethylenes 13%
• Diodes 11%
• Acids 11%
• Wavelength 11%
• Surface roughness 10%
• Temperature 5%

Physics & Astronomy

• zinc oxides 72%
• light emitting diodes 59%
• aluminum 51%
• thin films 38%
• hydrogen 30%
• partial pressure 24%
• anodes 21%
• conductivity 16%
• sulfonates 16%
• control equipment 15%
• phenyls 13%
• electroluminescence 12%
• indium oxides 12%
• tin oxides 12%
• gas mixtures 11%
• acids 11%
• polyethylenes 11%
• radio frequencies 10%
• surface roughness 10%
• magnetron sputtering 10%
• transmittance 10%
• argon 9%
• diodes 9%
• conduction 8%
• room temperature 6%
• wavelengths 5%
• performance 5%

Chemical Compounds

• Zinc Oxide 73%
• Semiconductor 57%
• Hydrogen 38%
• Partial Pressure 35%
• Shallow Donor 31%
• Anode 27%
• Liquid Film 27%
• Conductivity 25%
• Hole Transport 22%
• Magnetron Sputtering 21%
• Electroluminescence 19%
• Surface Roughness 18%
• Transmittance 18%
• Sulfonate 17%
• Polycrystalline Solid 16%
• Band Gap 14%
• Wavelength 13%
• Ambient Reaction Temperature 10%
• Gas 9%
• Mixture 8%
• Acid 6%