Hydrogenated aluminium-doped zinc oxide semiconductor thin films for polymeric light-emitting diodes

X. T. Hao*, F R Zhu, K S Ong, L W Tan

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

53 Citations (Scopus)

Abstract

Highly conducting transparent thin films of aluminium(Al)-doped zinc oxide (ZnO:Al) were deposited by a radio frequency magnetron-sputtering technique using an argon and hydrogen gas mixture at room temperature. Hydrogen serves as a shallow donor and plays a critical role in improving the Al doping efficiency to enhance the conductivity of thin films. The effect of hydrogen partial pressure on the properties of ZnO:Al films was investigated in detail. Polycrystalline ZnO:Al films with a surface roughness of about 2 nm, conductivity of 1.97 × 103 S cm−1, transmittance of over 83% in the visible wavelength region and an optical band gap of 3.93 eV were achieved at a hydrogen partial pressure of 7.5 × 10−4 Pa. A ZnO:Al film with the desired properties was used as an anode contact in a bi-layer polymeric light-emitting diode. A polyethylene dioxythiophene–polystyrene sulfonate doped with poly(styrenesulfonic acid) (PEDOT: PSS) and phenyl-substituted poly(p-phenylene vinylene) (Ph-PPV) were employed as a hole transport layer and a light-emitting layer, respectively. The electro-luminescence performance of the aforementioned diode was studied and compared to a control device with an indium tin oxide anode.

Original languageEnglish
Pages (from-to)48-54
Number of pages7
JournalSemiconductor Science and Technology
Volume21
Issue number1
Early online date28 Nov 2005
DOIs
Publication statusPublished - Jan 2006

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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