TY - JOUR
T1 - Hole transporting properties of tris(8-hydroxyquinoline) aluminum (Alq 3)
AU - Fong, H. H.
AU - So, S. K.
N1 - Funding Information:
Supports of this research by the Research Committee of Hong Kong Baptist University and the Research Grant Council of Hong Kong under HKBU/2173/04E are gratefully acknowledged. One of the authors (H.H.F) would like to thanks S. V. Novikov for his fruitful discussion on the charge transport models.
PY - 2006/11/1
Y1 - 2006/11/1
N2 - The hole transporting properties of tris
(8-hydroxyquinoline) aluminum (Al q3) were investigated by time-of-flight (TOF)
technique between 278 and 373 K, and under an applied field range of 0.6-1.3
MVcm. At room temperature, the hole mobility has a value between 10-9 and 10-8
cm2 V-1 s-1. The hole mobility is at least two orders of magnitude less than
electron under identical preparation and measurement conditions. Generally, all
hole TOF transients of Al q3 exhibit a nondispersive behavior, with a clear plateau
region and a dispersion tail. Two disorder transport models, namely, the
Gaussian disorder model (GDM) and the correlated disorder model (CDM), were
applied to analyze the temperature and field dependent hole mobility data. The
GDM, however, is found to be invalid because it fails to produce a meaningful
positional disorder parameter. The CDM gives a better fit to the data, yet the
model is still not satisfactory. This article may be downloaded for personal use
only. Any other use requires prior permission of the author and AIP Publishing.
This article appeared in H. H. Fong, S. K. So; Hole
transporting properties of tris(8-hydroxyquinoline) aluminum (Alq3)(Alq3). J. Appl. Phys. 1
November 2006; 100 (9): 094502. https://doi.org/10.1063/1.2372388 and may be found at https://pubs.aip.org/aip/jap/article/100/9/094502/917979/Hole-transporting-properties-of-tris-8.
AB - The hole transporting properties of tris
(8-hydroxyquinoline) aluminum (Al q3) were investigated by time-of-flight (TOF)
technique between 278 and 373 K, and under an applied field range of 0.6-1.3
MVcm. At room temperature, the hole mobility has a value between 10-9 and 10-8
cm2 V-1 s-1. The hole mobility is at least two orders of magnitude less than
electron under identical preparation and measurement conditions. Generally, all
hole TOF transients of Al q3 exhibit a nondispersive behavior, with a clear plateau
region and a dispersion tail. Two disorder transport models, namely, the
Gaussian disorder model (GDM) and the correlated disorder model (CDM), were
applied to analyze the temperature and field dependent hole mobility data. The
GDM, however, is found to be invalid because it fails to produce a meaningful
positional disorder parameter. The CDM gives a better fit to the data, yet the
model is still not satisfactory. This article may be downloaded for personal use
only. Any other use requires prior permission of the author and AIP Publishing.
This article appeared in H. H. Fong, S. K. So; Hole
transporting properties of tris(8-hydroxyquinoline) aluminum (Alq3)(Alq3). J. Appl. Phys. 1
November 2006; 100 (9): 094502. https://doi.org/10.1063/1.2372388 and may be found at https://pubs.aip.org/aip/jap/article/100/9/094502/917979/Hole-transporting-properties-of-tris-8.
UR - http://www.scopus.com/inward/record.url?scp=33751113863&partnerID=8YFLogxK
U2 - 10.1063/1.2372388
DO - 10.1063/1.2372388
M3 - Journal article
AN - SCOPUS:33751113863
SN - 0021-8979
VL - 100
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 9
M1 - 094502
ER -