Hole transporting properties of tris(8-hydroxyquinoline) aluminum (Alq 3)

H. H. Fong, S. K. So*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

49 Citations (Scopus)
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Abstract

The hole transporting properties of tris (8-hydroxyquinoline) aluminum (Al q3) were investigated by time-of-flight (TOF) technique between 278 and 373 K, and under an applied field range of 0.6-1.3 MVcm. At room temperature, the hole mobility has a value between 10-9 and 10-8 cm2 V-1 s-1. The hole mobility is at least two orders of magnitude less than electron under identical preparation and measurement conditions. Generally, all hole TOF transients of Al q3 exhibit a nondispersive behavior, with a clear plateau region and a dispersion tail. Two disorder transport models, namely, the Gaussian disorder model (GDM) and the correlated disorder model (CDM), were applied to analyze the temperature and field dependent hole mobility data. The GDM, however, is found to be invalid because it fails to produce a meaningful positional disorder parameter. The CDM gives a better fit to the data, yet the model is still not satisfactory.

 

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in H. H. Fong, S. K. So; Hole transporting properties of tris(8-hydroxyquinoline) aluminum (Alq3)(Alq3). J. Appl. Phys. 1 November 2006; 100 (9): 094502. https://doi.org/10.1063/1.2372388 and may be found at https://pubs.aip.org/aip/jap/article/100/9/094502/917979/Hole-transporting-properties-of-tris-8.

 

Original languageEnglish
Article number094502
Number of pages5
JournalJournal of Applied Physics
Volume100
Issue number9
DOIs
Publication statusPublished - 1 Nov 2006

Scopus Subject Areas

  • Physics and Astronomy(all)

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