Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

Yanlian Lei; Ning Li; Wing-Kin Edward Chan; Beng Ong; Furong Zhu

doi:10.1016/j.orgel.2017.05.029

Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

Yanlian Lei, Ning Li, Wing-Kin Edward Chan, Beng Ong, Furong Zhu^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › peer-review

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Abstract

Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm². This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

Original language	English
Pages (from-to)	12-18
Number of pages	7
Journal	Organic Electronics
Volume	48
Early online date	17 May 2017
DOIs	https://doi.org/10.1016/j.orgel.2017.05.029
Publication status	Published - Sept 2017

User-Defined Keywords

Organic phototransistor
Near-infrared detector
D-A polymer
Photoresponsivity

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10.1016/j.orgel.2017.05.029

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@article{1e8c8c33285d4d39ba66f2c85feaa4ec,

title = "Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks",

abstract = "Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.",

keywords = "Organic phototransistor, Near-infrared detector, D-A polymer, Photoresponsivity",

author = "Yanlian Lei and Ning Li and Chan, {Wing-Kin Edward} and Beng Ong and Furong Zhu",

note = "Funding Information: This work was financially supported by the Research Grants Council of Hong Kong Special Administrative Region, China, General Research Fund (GRF/12303114), Hong Kong Baptist University Faculty Research Grant (FRG2/15-16/072) and Inter-institutional Collaborative Research Scheme (RC-ICRS/15-16/04). Y.L. Lei also acknowledges the financial support from National Natural Science Foundation of China (Grant No. 11204247).",

year = "2017",

month = sep,

doi = "10.1016/j.orgel.2017.05.029",

language = "English",

volume = "48",

pages = "12--18",

journal = "Organic Electronics",

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T1 - Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

AU - Lei, Yanlian

AU - Li, Ning

AU - Chan, Wing-Kin Edward

AU - Ong, Beng

AU - Zhu, Furong

N1 - Funding Information: This work was financially supported by the Research Grants Council of Hong Kong Special Administrative Region, China, General Research Fund (GRF/12303114), Hong Kong Baptist University Faculty Research Grant (FRG2/15-16/072) and Inter-institutional Collaborative Research Scheme (RC-ICRS/15-16/04). Y.L. Lei also acknowledges the financial support from National Natural Science Foundation of China (Grant No. 11204247).

PY - 2017/9

Y1 - 2017/9

N2 - Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

AB - Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

KW - Organic phototransistor

KW - Near-infrared detector

KW - D-A polymer

KW - Photoresponsivity

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U2 - 10.1016/j.orgel.2017.05.029

DO - 10.1016/j.orgel.2017.05.029

M3 - Journal article

AN - SCOPUS:85019902572

SN - 1566-1199

VL - 48

SP - 12

EP - 18

JO - Organic Electronics

JF - Organic Electronics

ER -

Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

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