Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

Yanlian Lei; Ning Li; Wing Kin Edward Chan; Beng ONG; Fu Rong ZHU

doi:10.1016/j.orgel.2017.05.029

Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

Yanlian Lei, Ning Li, Wing Kin Edward Chan, Beng ONG, Fu Rong ZHU^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm². This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

Original language	English
Pages (from-to)	12-18
Number of pages	7
Journal	Organic Electronics
Volume	48
DOIs	https://doi.org/10.1016/j.orgel.2017.05.029
Publication status	Published - Sept 2017

Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

User-Defined Keywords

D-A polymer
Near-infrared detector
Organic phototransistor
Photoresponsivity

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10.1016/j.orgel.2017.05.029

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title = "Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks",

abstract = "Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.",

keywords = "D-A polymer, Near-infrared detector, Organic phototransistor, Photoresponsivity",

author = "Yanlian Lei and Ning Li and Chan, {Wing Kin Edward} and Beng ONG and ZHU, {Fu Rong}",

note = "Funding Information: This work was financially supported by the Research Grants Council of Hong Kong Special Administrative Region, China, General Research Fund (GRF/12303114), Hong Kong Baptist University Faculty Research Grant (FRG2/15-16/072) and Inter-institutional Collaborative Research Scheme (RC-ICRS/15-16/04). Y.L. Lei also acknowledges the financial support from National Natural Science Foundation of China (Grant No. 11204247).",

year = "2017",

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doi = "10.1016/j.orgel.2017.05.029",

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AU - Lei, Yanlian

AU - Li, Ning

AU - Chan, Wing Kin Edward

AU - ONG, Beng

AU - ZHU, Fu Rong

N1 - Funding Information: This work was financially supported by the Research Grants Council of Hong Kong Special Administrative Region, China, General Research Fund (GRF/12303114), Hong Kong Baptist University Faculty Research Grant (FRG2/15-16/072) and Inter-institutional Collaborative Research Scheme (RC-ICRS/15-16/04). Y.L. Lei also acknowledges the financial support from National Natural Science Foundation of China (Grant No. 11204247).

PY - 2017/9

Y1 - 2017/9

N2 - Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

AB - Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

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KW - Photoresponsivity

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Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

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