Highly sensitive near infrared organic phototransistors based on conjugated polymer nanowire networks

Yanlian Lei, Ning Li, Wing-Kin Edward Chan, Beng Ong, Furong Zhu*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

61 Citations (Scopus)
34 Downloads (Pure)


Highly sensitive near-infrared (NIR) organic phototransistors (OPTs) were fabricated using nanowire network based on a narrow bandgap donor-acceptor (D-A) polymer as the photoactive channel. The D-A polymer nanowire network-based NIR-OPTs exhibit high responsivity of ∼246 A/W under an NIR illumination source (850 nm) with a light intensity of ∼0.1 mW/cm2. This value is over one order of magnitude higher than that of the structurally identical planar D-A polymer thin film OPTs. The high performance of the nanowire network-based phototransistors is attributed to the excellent hole transport ability, reduced density of the structural defects in the polymer nanowires, and improved contact at the channel layer/electrode interfaces. The high sensitivity and low cost solution-fabrication process render this OPT technology appealing and practically viable for application in large area NIR sensors.

Original languageEnglish
Pages (from-to)12-18
Number of pages7
JournalOrganic Electronics
Early online date17 May 2017
Publication statusPublished - Sept 2017

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Organic phototransistor
  • Near-infrared detector
  • D-A polymer
  • Photoresponsivity


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