High temperature carrier mobility as an intrinsic transport parameter of an organic semiconductor

K. K. Tsung, Shu Kong SO*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The high temperature limit of hole mobility (μ) in N,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′diamine (NPB) has been studied by time-of-flight technique. The effect of dopants on μ was also investigated. It was found that the μ is independent of the nature of dopants. The common μ can be applied to estimate the full temperature dependence of zero-field mobility (μ0), if μ0 at one temperature is known. We demonstrate this concept by predicting the room temperature μ0 of NPB-doped with copper phthalocyanine (CuPc). The mobility prediction of CuPc-doped-NPB was then verified by the classic work of Hoesterey and Letson [D.C. Hoesterey, G.M. Letson, J. Phys. Chem. Solids 24 (1963) 1609].

Original languageEnglish
Pages (from-to)661-665
Number of pages5
JournalOrganic Electronics
Volume10
Issue number4
DOIs
Publication statusPublished - Jul 2009

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Charge transport
  • High temperature limit of carrier mobility
  • NPB
  • Organic semiconductor

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