High Responsivity of Narrowband Photomultiplication Organic Photodetector via Interfacial Modification

Jia Jiao, Ye Zhang, Linlin Shi*, Guohui Li, Ting Ji, Wenyan Wang, Rong Wen, Yuying Hao, Kaiying Wang, Furong Zhu*, Yanxia Cui*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

6 Citations (Scopus)


Narrowband-response organic photodetectors with high responsivity are widely demanded in areas of substance detection, industry automation, smart wearable devices, etc. Photomultiplication-type organic photodetectors (PM-OPDs) with high responsivity usually have a broadband photoresponse due to the broadband absorption nature of the photoactive materials. In this work, effort is made to develop a high-performance filterless narrowband PM-OPD using the charge injection narrowing (CIN) effect. A 0.8 nm thick Al2O3 interlayer is used to mitigate the dark current density (JD) in the narrowband PM-OPD, prepared using a 2.8 µm thick blend layer of P3HT:[6,6]-phenyl-C70-butyric acid methyl ester (PC70BM), achieving a peak responsivity of 1334 A W−1 at 650 nm, with a full-width at half-maximum of 40 nm. The narrowband PM-OPD also possesses an impressive high specific detectivity of 9.73 × 1013 Jones. It is shown that the use of a 0.8 nm thick Al2O3 interlayer significantly suppresses the JD, creating a high energy barrier at the anode/photoactive interface and achieving a narrowband photoresponse behavior due to the CIN effect. The results of this work provide an exciting option for a variety of applications for OPDs with low cost, flexibility, and high sensitivity.

Original languageEnglish
Article number2203132
JournalAdvanced Optical Materials
Issue number12
Publication statusPublished - 19 Jun 2023

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

User-Defined Keywords

  • interfacial modification
  • narrowband
  • organic photodetectors
  • photomultiplication
  • responsivity


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