High-performance low-temperature transparent conducting aluminum-doped ZnO thin films and applications

Xiao Tao Hao, Li Wei Tan, Kian Soo Ong, Furong Zhu*

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

89 Citations (Scopus)

Abstract

Transparent conducting aluminum-doped zinc oxide (AZO) films have been prepared on glass substrates by radio frequency magnetron sputtering using a hydrogen-argon gas mixture at room temperature. The effect of hydrogen partial pressure on the optical and electrical properties of AZO films is investigated. The hydrogen partial pressure was varied from 0 to 1.25×10-3 Pa during film growth. Polycrystalline Al-doped ZnO films having a preferred orientation with the c-axis perpendicular to the substrate were obtained with a root mean square roughness of ∼2 nm. At an optimal condition, the AZO films with a resistivity of 5.1×10-4 Ω cm and an optical transparency of over 83% in the visible wavelength region are achieved. The AZO films with desired properties were used as an anode contact in polymeric electroluminescent devices and the electroluminescence performance of these OLEDs was studied.

Original languageEnglish
Pages (from-to)44-47
Number of pages4
JournalJournal of Crystal Growth
Volume287
Issue number1
DOIs
Publication statusPublished - 18 Jan 2006
EventICMAT 2005 - International Conference on Materials for Advanced Technologies. Symposium N: ZnO and Related Materials - , Singapore
Duration: 3 Jul 20058 Jul 2005

Scopus Subject Areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

User-Defined Keywords

  • B1. Doped zinc oxide
  • B1. Hydrogen
  • B3. OLED

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