Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant

H. Wang*, H. P. Ho, K. C. Lo, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

26 Citations (Scopus)


We investigate p-type doping in ZnO prepared by metal-organic chemical vapour deposition with dimethylhydrazine (DMHy) as the nitrogen dopant source. Results obtained by x-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen incorporation and that nitrogen doping is critically influenced by growth conditions, e.g. the N/Ga flux ratio in growth. Within an appropriate N/Ga flux ratio range, p-type ZnO can be realized. The effect of the N/Ga flux ratio on the conductivity conversion of ZnO is reported. The extrinsic nitrogen acceptor level is calculated to be about 160 meV from low-temperature photoluminescence spectra.

Original languageEnglish
Article number049
Pages (from-to)4682-4685
Number of pages4
JournalJournal Physics D: Applied Physics
Issue number15
Publication statusPublished - 8 Aug 2007

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


Dive into the research topics of 'Growth of p-type ZnO thin films by (N, Ga) co-doping using DMHy dopant'. Together they form a unique fingerprint.

Cite this