Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

Y. F. Mei, G. G. Siu, X. H. Huang, Kok Wai CHEAH, Z. G. Dong, L. Fang, M. R. Sheng, X. L. Wu, X. M. Bao

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Germanium oxide thin films on silicon substrate were produced using pulsed laser deposition method under adjusted substrate temperature and oxygen pressure. There existed two PL bands observed in our samples, violet and blue bands. We attributed both of them to the neutral oxygen vacancy (NOV) but of different types: GeGe and GeSi, respectively. Fourier transform infrared spectra (FTIR) measurements in our samples not only proved the GeOSi vibration but also assigned the peaks around 1000cm-1 in Si-Ge oxide system qualitatively.

Original languageEnglish
Pages (from-to)248-251
Number of pages4
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume331
Issue number3-4
DOIs
Publication statusPublished - 18 Oct 2004

Scopus Subject Areas

  • Physics and Astronomy(all)

User-Defined Keywords

  • Color centers
  • FTIR
  • Ge oxide film
  • Laser deposition
  • Photoluminescence

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