Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

Y. F. Mei; G. G. Siu; X. H. Huang; K. W. Cheah; Z. G. Dong; L. Fang; M. R. Sheng; X. L. Wu; X. M. Bao

doi:10.1016/j.physleta.2004.07.029

Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

Y. F. Mei, G. G. Siu, X. H. Huang, K. W. Cheah, Z. G. Dong, L. Fang, M. R. Sheng, X. L. Wu, X. M. Bao

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

13 Citations (Scopus)

Abstract

Germanium oxide thin films on silicon substrate were produced using pulsed laser deposition method under adjusted substrate temperature and oxygen pressure. There existed two PL bands observed in our samples, violet and blue bands. We attributed both of them to the neutral oxygen vacancy (NOV) but of different types: GeGe and GeSi, respectively. Fourier transform infrared spectra (FTIR) measurements in our samples not only proved the GeOSi vibration but also assigned the peaks around 1000cm^-1 in Si-Ge oxide system qualitatively.

Original language	English
Pages (from-to)	248-251
Number of pages	4
Journal	Physics Letters A
Volume	331
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physleta.2004.07.029
Publication status	Published - 18 Oct 2004

Scopus Subject Areas

Physics and Astronomy(all)

User-Defined Keywords

Color centers
FTIR
Ge oxide film
Laser deposition
Photoluminescence

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10.1016/j.physleta.2004.07.029

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title = "Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition",

abstract = "Germanium oxide thin films on silicon substrate were produced using pulsed laser deposition method under adjusted substrate temperature and oxygen pressure. There existed two PL bands observed in our samples, violet and blue bands. We attributed both of them to the neutral oxygen vacancy (NOV) but of different types: GeGe and GeSi, respectively. Fourier transform infrared spectra (FTIR) measurements in our samples not only proved the GeOSi vibration but also assigned the peaks around 1000cm-1 in Si-Ge oxide system qualitatively.",

keywords = "Color centers, FTIR, Ge oxide film, Laser deposition, Photoluminescence",

author = "Mei, {Y. F.} and Siu, {G. G.} and Huang, {X. H.} and Cheah, {K. W.} and Dong, {Z. G.} and L. Fang and Sheng, {M. R.} and Wu, {X. L.} and Bao, {X. M.}",

note = "Funding Information: Y.F. Mei, one of the authors, sent his gratitude to Mr. M.K. Tang and Dr. Amy X.Y. Lu for their kindly help during the experiments. This work was supported by the grants from the Natural Science Foundations of China and JiangSu province, as well as Hong Kong Research Grants Council (RGC).",

year = "2004",

month = oct,

day = "18",

doi = "10.1016/j.physleta.2004.07.029",

language = "English",

volume = "331",

pages = "248--251",

journal = "Physics Letters A",

issn = "0375-9601",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

AU - Mei, Y. F.

AU - Siu, G. G.

AU - Huang, X. H.

AU - Cheah, K. W.

AU - Dong, Z. G.

AU - Fang, L.

AU - Sheng, M. R.

AU - Wu, X. L.

AU - Bao, X. M.

N1 - Funding Information: Y.F. Mei, one of the authors, sent his gratitude to Mr. M.K. Tang and Dr. Amy X.Y. Lu for their kindly help during the experiments. This work was supported by the grants from the Natural Science Foundations of China and JiangSu province, as well as Hong Kong Research Grants Council (RGC).

PY - 2004/10/18

Y1 - 2004/10/18

N2 - Germanium oxide thin films on silicon substrate were produced using pulsed laser deposition method under adjusted substrate temperature and oxygen pressure. There existed two PL bands observed in our samples, violet and blue bands. We attributed both of them to the neutral oxygen vacancy (NOV) but of different types: GeGe and GeSi, respectively. Fourier transform infrared spectra (FTIR) measurements in our samples not only proved the GeOSi vibration but also assigned the peaks around 1000cm-1 in Si-Ge oxide system qualitatively.

AB - Germanium oxide thin films on silicon substrate were produced using pulsed laser deposition method under adjusted substrate temperature and oxygen pressure. There existed two PL bands observed in our samples, violet and blue bands. We attributed both of them to the neutral oxygen vacancy (NOV) but of different types: GeGe and GeSi, respectively. Fourier transform infrared spectra (FTIR) measurements in our samples not only proved the GeOSi vibration but also assigned the peaks around 1000cm-1 in Si-Ge oxide system qualitatively.

KW - Color centers

KW - FTIR

KW - Ge oxide film

KW - Laser deposition

KW - Photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=4644370906&partnerID=8YFLogxK

U2 - 10.1016/j.physleta.2004.07.029

DO - 10.1016/j.physleta.2004.07.029

M3 - Journal article

AN - SCOPUS:4644370906

SN - 0375-9601

VL - 331

SP - 248

EP - 251

JO - Physics Letters A

JF - Physics Letters A

IS - 3-4

ER -

Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

Abstract

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