Green photoluminescence in ZnO nanostructures

A. B. Djurišić; Y. H. Leung; Z. T. Liu; D. Li; M. H. Xie; W. C.H. Choy; Kok Wai CHEAH

doi:10.1063/1.1994392

Green photoluminescence in ZnO nanostructures

A. B. Djurišić^*, Y. H. Leung, Z. T. Liu, D. Li, M. H. Xie, W. C.H. Choy, Kok Wai CHEAH

^*Corresponding author for this work

Department of Physics

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

Abstract

In photoluminescence (PL) spectrum of ZnO, typically one or more peaks in the visible spectral range due to defect emission can be observed in addition to one UV peak due to band edge emission. The origin of the defect emission is controversial and several mechanisms have been proposed. In this work, we fabricated ZnO nanostructures with different methods (evaporation and chemical synthesis). We found that the preparation method influences the peak position of the defect emission. Different hypotheses for the origin of the green emission in our nanostructured samples are discussed.

Original language	English
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	889-890
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994392
Publication status	Published - 30 Jun 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: 26 Jul 2004 → 30 Jul 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	26/07/04 → 30/07/04

Scopus Subject Areas

Physics and Astronomy(all)

Access to Document

10.1063/1.1994392

Cite this

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title = "Green photoluminescence in ZnO nanostructures",

abstract = "In photoluminescence (PL) spectrum of ZnO, typically one or more peaks in the visible spectral range due to defect emission can be observed in addition to one UV peak due to band edge emission. The origin of the defect emission is controversial and several mechanisms have been proposed. In this work, we fabricated ZnO nanostructures with different methods (evaporation and chemical synthesis). We found that the preparation method influences the peak position of the defect emission. Different hypotheses for the origin of the green emission in our nanostructured samples are discussed.",

author = "Djuri{\v s}i{\'c}, {A. B.} and Leung, {Y. H.} and Liu, {Z. T.} and D. Li and Xie, {M. H.} and Choy, {W. C.H.} and CHEAH, {Kok Wai}",

note = "Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994392",

language = "English",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "889--890",

booktitle = "PHYSICS OF SEMICONDUCTORS",

}

Djurišić, AB, Leung, YH, Liu, ZT, Li, D, Xie, MH, Choy, WCH & CHEAH, KW 2005, Green photoluminescence in ZnO nanostructures. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 889-890, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 26/07/04. https://doi.org/10.1063/1.1994392

TY - GEN

T1 - Green photoluminescence in ZnO nanostructures

AU - Djurišić, A. B.

AU - Leung, Y. H.

AU - Liu, Z. T.

AU - Li, D.

AU - Xie, M. H.

AU - Choy, W. C.H.

AU - CHEAH, Kok Wai

PY - 2005/6/30

Y1 - 2005/6/30

N2 - In photoluminescence (PL) spectrum of ZnO, typically one or more peaks in the visible spectral range due to defect emission can be observed in addition to one UV peak due to band edge emission. The origin of the defect emission is controversial and several mechanisms have been proposed. In this work, we fabricated ZnO nanostructures with different methods (evaporation and chemical synthesis). We found that the preparation method influences the peak position of the defect emission. Different hypotheses for the origin of the green emission in our nanostructured samples are discussed.

AB - In photoluminescence (PL) spectrum of ZnO, typically one or more peaks in the visible spectral range due to defect emission can be observed in addition to one UV peak due to band edge emission. The origin of the defect emission is controversial and several mechanisms have been proposed. In this work, we fabricated ZnO nanostructures with different methods (evaporation and chemical synthesis). We found that the preparation method influences the peak position of the defect emission. Different hypotheses for the origin of the green emission in our nanostructured samples are discussed.

UR - http://www.scopus.com/inward/record.url?scp=33749476390&partnerID=8YFLogxK

U2 - 10.1063/1.1994392

DO - 10.1063/1.1994392

M3 - Conference proceeding

AN - SCOPUS:33749476390

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 889

EP - 890

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Green photoluminescence in ZnO nanostructures

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