Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

W. K. Mui; M. K. Lui; C. C. Ling; C. D. Beling; S. Fung; Kok Wai CHEAH; K. F. Li; Y. W. Zhao

Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

W. K. Mui, M. K. Lui, C. C. Ling, C. D. Beling, S. Fung, Kok Wai CHEAH, K. F. Li, Y. W. Zhao

Department of Physics

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1 Citation (Scopus)

Abstract

Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the V_GaGa_sb defect, which is the proposed residual acceptor of GaSb.

Original language	English
Pages (from-to)	423-428
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	692
Publication status	Published - 2002

Scopus Subject Areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{e40afe2d4b844093a19e57e53adaadd1,

title = "Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence",

abstract = "Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the VGaGasb defect, which is the proposed residual acceptor of GaSb.",

author = "Mui, {W. K.} and Lui, {M. K.} and Ling, {C. C.} and Beling, {C. D.} and S. Fung and CHEAH, {Kok Wai} and Li, {K. F.} and Zhao, {Y. W.}",

year = "2002",

language = "English",

volume = "692",

pages = "423--428",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

AU - Mui, W. K.

AU - Lui, M. K.

AU - Ling, C. C.

AU - Beling, C. D.

AU - Fung, S.

AU - CHEAH, Kok Wai

AU - Li, K. F.

AU - Zhao, Y. W.

PY - 2002

Y1 - 2002

N2 - Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the VGaGasb defect, which is the proposed residual acceptor of GaSb.

AB - Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the VGaGasb defect, which is the proposed residual acceptor of GaSb.

UR - http://www.scopus.com/inward/record.url?scp=0036058213&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036058213

SN - 0272-9172

VL - 692

SP - 423

EP - 428

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

ER -

Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

Abstract

Scopus Subject Areas

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