Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

W. K. Mui; M. K. Lui; C. C. Ling; C. D. Beling; S. Fung; K. W. Cheah; K. F. Li; Y. W. Zhao

doi:10.1557/PROC-692-H9.5.1

Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

W. K. Mui, M. K. Lui, C. C. Ling^*, C. D. Beling, S. Fung, K. W. Cheah, K. F. Li, Y. W. Zhao

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the V_GaGa_sb defect, which is the proposed residual acceptor of GaSb.

Original language	English
Pages (from-to)	423-428
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	692
DOIs	https://doi.org/10.1557/PROC-692-H9.5.1
Publication status	Published - 28 Nov 2001
Event	Materials Research Society Fall Symposium 2001, MRS Fall Symposium 2001 - Boston, United States Duration: 26 Nov 2001 → 29 Nov 2001 https://www.mrs.org/docs/default-source/meetings-events/fall-meetings/abstracts-1999-2004/fall-2001-abstract-pdfs/abstracts-symposium-h-progress-in-semiconductor-materials-for-optoelectronic-applications.pdf?sfvrsn=2e138911_7 (Link to session abstracts) https://www.mrs.org/fall2001 (Link to conference abstracts)

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@article{e40afe2d4b844093a19e57e53adaadd1,

title = "Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence",

abstract = "Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the VGaGasb defect, which is the proposed residual acceptor of GaSb.",

author = "Mui, {W. K.} and Lui, {M. K.} and Ling, {C. C.} and Beling, {C. D.} and S. Fung and Cheah, {K. W.} and Li, {K. F.} and Zhao, {Y. W.}",

year = "2001",

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doi = "10.1557/PROC-692-H9.5.1",

language = "English",

volume = "692",

pages = "423--428",

journal = "Materials Research Society Symposium Proceedings",

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publisher = "Materials Research Society",

url = "https://www.mrs.org/docs/default-source/meetings-events/fall-meetings/abstracts-1999-2004/fall-2001-abstract-pdfs/abstracts-symposium-h-progress-in-semiconductor-materials-for-optoelectronic-applications.pdf?sfvrsn=2e138911_7, https://www.mrs.org/fall2001",

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TY - JOUR

T1 - Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

AU - Mui, W. K.

AU - Lui, M. K.

AU - Ling, C. C.

AU - Beling, C. D.

AU - Fung, S.

AU - Cheah, K. W.

AU - Li, K. F.

AU - Zhao, Y. W.

PY - 2001/11/28

Y1 - 2001/11/28

N2 - Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the VGaGasb defect, which is the proposed residual acceptor of GaSb.

AB - Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the VGaGasb defect, which is the proposed residual acceptor of GaSb.

UR - http://www.scopus.com/inward/record.url?scp=0036058213&partnerID=8YFLogxK

UR - https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/abs/gallium-vacancy-in-gasb-studied-by-positron-lifetime-spectroscopy-and-photoluminescence/671E8DFDF77644EE9709CE8718B9DF70

U2 - 10.1557/PROC-692-H9.5.1

DO - 10.1557/PROC-692-H9.5.1

M3 - Conference article

AN - SCOPUS:0036058213

SN - 0272-9172

VL - 692

SP - 423

EP - 428

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Materials Research Society Fall Symposium 2001, MRS Fall Symposium 2001

Y2 - 26 November 2001 through 29 November 2001

ER -

Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

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