Gallium vacancy in GaSb studied by positron lifetime spectroscopy and photoluminescence

W. K. Mui, M. K. Lui, C. C. Ling, C. D. Beling, S. Fung, Kok Wai CHEAH, K. F. Li, Y. W. Zhao

Research output: Contribution to journalJournal articlepeer-review

1 Citation (Scopus)


Positron lifetime technique and photoluminescence (PL) were employed to study the vacancy type defects in p-type Zn-doped and undoped GaSh samples. In the positron lifetime study, Ga vacancy related defect was identified in these materials and it was found to anneal out at temperature of about 350°C. For the PL measurement on the as-grown undoped sample performed at 10 K, a transition peak having a photon energy of about 777 meV was observed. This transition peak was observed to disappear after a 400°C annealing. Our results is consistent with the general belief that the 777 meV transition is related to the VGaGasb defect, which is the proposed residual acceptor of GaSb.

Original languageEnglish
Pages (from-to)423-428
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 2002

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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