Abstract
Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300°C annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (∼2×1017cm-3) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the VGa defect, at least for cases with annealing temperatures above 300°C, VGa is not the acceptor responsible for the p-type conduction.
Original language | English |
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Pages (from-to) | 3934-3936 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 21 |
DOIs | |
Publication status | Published - 27 May 2002 |
Scopus Subject Areas
- Physics and Astronomy (miscellaneous)