Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

C. C. Ling, W. K. Mui, C. H. Lam, C. D. Beling, S. Fung, M. K. Lui, Kok Wai CHEAH, K. F. Li, Y. W. Zhao, M. Gong

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20 Citations (Scopus)

Abstract

Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300°C annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (∼2×1017cm-3) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the VGa defect, at least for cases with annealing temperatures above 300°C, VGa is not the acceptor responsible for the p-type conduction.

Original languageEnglish
Pages (from-to)3934-3936
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number21
DOIs
Publication statusPublished - 27 May 2002

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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