TY - JOUR
T1 - Full Defects Passivation Enables 21% Efficiency Perovskite Solar Cells Operating in Air
AU - Liu, Xixia
AU - Yu, Zhigen
AU - Wang, Tian
AU - Chiu, Ka Lok
AU - Lin, Fen
AU - Gong, Hao
AU - Ding, Liming
AU - Cheng, Yuanhang
N1 - Funding Information:
This work was supported by the Singapore Ministry of Education Academic Research Fund (Tier 2 MOE2016-T2-1-049, Grant Number R284-000-157-112). X.L. thanks the Boya postdoctoral fellowship of Peking University and the International Postdoctoral Exchange Fellowship Program (Talent-Introduction Program). L.D. thanks the National Key Research and Development Program of China (2017YFA0206600) and the National Natural Science Foundation of China (51773045, 21772030, 51922032, 21961160720) for financial support. The Solar Energy Research Institute of Singapore (SERIS) is supported by the National University of Singapore (NUS), the National Research Foundation Singapore (NRF) and the Singapore Economic Development Board (EDB).
Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2020/10/13
Y1 - 2020/10/13
N2 - The lattice defects in the bulk and on the surface of the halide perovskite layer serve as trap sites and recombination centers to annihilate photogenerated carriers, determining the performance and stability of perovskite optoelectronic devices. Herein, the previously reported surface defects passivation engineering is extended to a full defects passivation strategy through stereoscopically introducing the cysteamine hydrochloride (CSA-Cl) in the bulk and on the surface of perovskites. First-principle density functional theory (DFT) calculations are employed to theoretically verify the multiple defects passivation effect of the CAS-Cl on the perovskite. The perovskite layer with full defects passivation exhibits superior carrier dynamics as revealed by femtosecond transient absorption due to the reduced defect density determined by a highly sensitive photothermal deflection spectroscopy technique. Consequently, a high efficiency approaching 21% is achieved for the inverted planar perovskite solar cells (PVSCs). More importantly, the CAS-Cl passivated PVSCs exhibit operation in air, which will be beneficial for the in situ device test for understanding the photophysics involved. This work provides a promising strategy to reduce the defects in both the perovskite bulk and surface for superior optoelectronic properties, facilitating the development of highly efficient and stable PVSCs and other optoelectronic devices.
AB - The lattice defects in the bulk and on the surface of the halide perovskite layer serve as trap sites and recombination centers to annihilate photogenerated carriers, determining the performance and stability of perovskite optoelectronic devices. Herein, the previously reported surface defects passivation engineering is extended to a full defects passivation strategy through stereoscopically introducing the cysteamine hydrochloride (CSA-Cl) in the bulk and on the surface of perovskites. First-principle density functional theory (DFT) calculations are employed to theoretically verify the multiple defects passivation effect of the CAS-Cl on the perovskite. The perovskite layer with full defects passivation exhibits superior carrier dynamics as revealed by femtosecond transient absorption due to the reduced defect density determined by a highly sensitive photothermal deflection spectroscopy technique. Consequently, a high efficiency approaching 21% is achieved for the inverted planar perovskite solar cells (PVSCs). More importantly, the CAS-Cl passivated PVSCs exhibit operation in air, which will be beneficial for the in situ device test for understanding the photophysics involved. This work provides a promising strategy to reduce the defects in both the perovskite bulk and surface for superior optoelectronic properties, facilitating the development of highly efficient and stable PVSCs and other optoelectronic devices.
KW - carrier dynamics
KW - density functional theory calculations
KW - full defects passivation
KW - perovskite solar cells
UR - http://www.scopus.com/inward/record.url?scp=85089390527&partnerID=8YFLogxK
U2 - 10.1002/aenm.202001958
DO - 10.1002/aenm.202001958
M3 - Journal article
AN - SCOPUS:85089390527
SN - 1614-6832
VL - 10
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 38
M1 - 2001958
ER -