TY - JOUR
T1 - Formation of large grain and compact CH3NH3Pb(I1-xBrx)3 Film by multisteps solvent postannealing for high-efficiency perovskite solar cells
AU - Yu, Yuan
AU - Zhang, Fan
AU - Liu, Chengyuan
AU - Sun, Qinjun
AU - Li, Zhanfeng
AU - Cui, Yanxia
AU - Qin, Wei
AU - ZHU, Fu Rong
AU - Hao, Yuying
N1 - Funding Information:
Manuscript received January 4, 2018; revised March 17, 2018; accepted March 25, 2018. Date of publication April 25, 2018; date of current version June 19, 2018. This work was supported in part by the NSFC-Joint Fund of Shanxi Coal Based Low Carbon Nurturing Project under Grant U1710115, in part by the Key Research and Development (International Cooperation) Program of Shanxi under Grant 201603D421042, in part by the Platform and Base Special Project of Shanxi under Grant 201605D131038, and in part by the National Natural Scientific Foundation of China under Grant 61274056, Grant 61475109, and Grant 61571317. (Corresponding author: Yuying Hao.) Y. Yu, C. Liu, Q. Sun, Z. Li, Y. Cui, and Y. Hao are with the Key Laboratory of Advanced Transducers and Intelligent Control System of Ministry of Education, College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, China (e-mail:, [email protected]; [email protected]; [email protected]; [email protected]; [email protected]; [email protected]).
PY - 2018/7
Y1 - 2018/7
N2 - The reaction toward MA Pb(I1-xBrx)3 by the perovskite precursor is difficult to form a continuous film over a large area. In this paper, we develop a multisteps solvent-postannealing method based on a high-coverage MAPbI3 film a template for preparing uniform and compact MAPb(I1-xBrx)3 film with film-through large grain and uniform distribution of Br elements. The formed MAPbI3 film must be annealed in the mixture vapor of dimethyl sulfoxide and aqueous HBr to achieve the simultaneous modification of composition and crystallinity, and then it has to be repaired further using CH3NH2 vapor annealing to eliminate the defects of the film surface and crystal grain boundaries. The corresponding perovskite solar cells (PSCs) yield a maximum power conversion efficiency of 17.23% with an open-circuit voltage (Voc) of 1.025 V, a short-circuit current (Jsc) of 20.88 2 and a fill factor (FF) of 80.54%, based on a structure of ITO/PEDOT:PSS/MAPb(I1-x Brx)3/PC61BM/Bphen/Ag, with an enhancement of 18% compared with that of the optimized MAPbI3 PSCs because of the simultaneous increase in Voc, Jsc, and FF. This paper provides a feasible and effective method to fabricate high-quality MAPb(I1-x Brx)3 films for high-efficiency solar energy conversion devices.
AB - The reaction toward MA Pb(I1-xBrx)3 by the perovskite precursor is difficult to form a continuous film over a large area. In this paper, we develop a multisteps solvent-postannealing method based on a high-coverage MAPbI3 film a template for preparing uniform and compact MAPb(I1-xBrx)3 film with film-through large grain and uniform distribution of Br elements. The formed MAPbI3 film must be annealed in the mixture vapor of dimethyl sulfoxide and aqueous HBr to achieve the simultaneous modification of composition and crystallinity, and then it has to be repaired further using CH3NH2 vapor annealing to eliminate the defects of the film surface and crystal grain boundaries. The corresponding perovskite solar cells (PSCs) yield a maximum power conversion efficiency of 17.23% with an open-circuit voltage (Voc) of 1.025 V, a short-circuit current (Jsc) of 20.88 2 and a fill factor (FF) of 80.54%, based on a structure of ITO/PEDOT:PSS/MAPb(I1-x Brx)3/PC61BM/Bphen/Ag, with an enhancement of 18% compared with that of the optimized MAPbI3 PSCs because of the simultaneous increase in Voc, Jsc, and FF. This paper provides a feasible and effective method to fabricate high-quality MAPb(I1-x Brx)3 films for high-efficiency solar energy conversion devices.
KW - CH3NH2 vapor annealing
KW - crystallinity
KW - HBr-DMSO system
KW - MAPb(IBr) film
KW - perovskite solar cell
UR - http://www.scopus.com/inward/record.url?scp=85045984030&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2018.2820909
DO - 10.1109/JPHOTOV.2018.2820909
M3 - Journal article
AN - SCOPUS:85045984030
SN - 2156-3381
VL - 8
SP - 1017
EP - 1022
JO - IEEE Journal of Photovoltaics
JF - IEEE Journal of Photovoltaics
IS - 4
ER -