Abstract
The reaction toward MA Pb(I1-xBrx)3 by the perovskite precursor is difficult to form a continuous film over a large area. In this paper, we develop a multisteps solvent-postannealing method based on a high-coverage MAPbI3 film a template for preparing uniform and compact MAPb(I1-xBrx)3 film with film-through large grain and uniform distribution of Br elements. The formed MAPbI3 film must be annealed in the mixture vapor of dimethyl sulfoxide and aqueous HBr to achieve the simultaneous modification of composition and crystallinity, and then it has to be repaired further using CH3NH2 vapor annealing to eliminate the defects of the film surface and crystal grain boundaries. The corresponding perovskite solar cells (PSCs) yield a maximum power conversion efficiency of 17.23% with an open-circuit voltage (Voc) of 1.025 V, a short-circuit current (Jsc) of 20.88 2 and a fill factor (FF) of 80.54%, based on a structure of ITO/PEDOT:PSS/MAPb(I1-x Brx)3/PC61BM/Bphen/Ag, with an enhancement of 18% compared with that of the optimized MAPbI3 PSCs because of the simultaneous increase in Voc, Jsc, and FF. This paper provides a feasible and effective method to fabricate high-quality MAPb(I1-x Brx)3 films for high-efficiency solar energy conversion devices.
Original language | English |
---|---|
Pages (from-to) | 1017-1022 |
Number of pages | 6 |
Journal | IEEE Journal of Photovoltaics |
Volume | 8 |
Issue number | 4 |
DOIs | |
Publication status | Published - Jul 2018 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
User-Defined Keywords
- CH3NH2 vapor annealing
- crystallinity
- HBr-DMSO system
- MAPb(IBr) film
- perovskite solar cell