Ferrocene-containing poly(fluorenylethynylene)s for nonvolatile resistive memory devices

Jing Xiang, Tai Kang Wang, Qiang Zhao*, Wei Huang, Cheuk Lam Ho*, Wai Yeung Wong*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

80 Citations (Scopus)

Abstract

Four new conjugated ferrocene-containing poly(fluorenylethynylene)s (PFcFE1-PFcFE4) with triphenylamine, carbazole or thiophene moieties in the main chain have been designed and synthesized via a Sonogashira coupling reaction. Their structures, molecular weights, optical features, thermal properties and memory performance were well studied. Two terminal single layer devices (ITO/polymer/Al) based on PFcFE1, PFcFE2 and PFcFE3 exhibited flash memory behaviours, while PFcFE4 shared the common characteristics of the "write-once read-many times" (WORM) memory effect. These results would provide a new series of ferrocene-containing conjugated polymers with further opportunities for memory applications.

Original languageEnglish
Pages (from-to)921-928
Number of pages8
JournalJournal of Materials Chemistry C
Volume4
Issue number5
Early online date24 Dec 2015
DOIs
Publication statusPublished - 7 Feb 2016

Scopus Subject Areas

  • General Chemistry
  • Materials Chemistry

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