Fabrication of n-type mesoporous silicon nanowires by one-step etching

Wai Keung To, Chi Him Tsang, Hau Hau Li, Jeffery HUANG*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

85 Citations (Scopus)

Abstract

In general, n-type mesoporous silicon nanowires (mp-SiNWs) are exclusively created by the two-step metal-assisted chemical etching (MACE). This work first reports that one-step MACE (in HF and AgNO 3) is also capable of producing the n-type mp-SiNWs, and the developed formula is generally adapted to generate SiNWs by etching n-Si(100) with electrical resistivity over a range of 10 -3-10 1 Ω•cm. Integrating the contribution of silicon intrinsic properties in the existing MACE mechanism explicitly accounts for the new findings and contradictions with previous studies. The as-generated mesoporous structures emit red light under laser excitation at room temperature. The red-color emission sensitively varies with temperature over a range of 16-300 K, attributed to a temperature-dependent photoluminescent mechanism.

Original languageEnglish
Pages (from-to)5252-5258
Number of pages7
JournalNano Letters
Volume11
Issue number12
DOIs
Publication statusPublished - 14 Dec 2011

Scopus Subject Areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

User-Defined Keywords

  • mesoporous
  • metal-assisted chemical etching (MACE)
  • photoluminescence (PL)
  • Silicon nanowires (SiNWs)

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