TY - JOUR
T1 - Fabrication of graphene modified CeO2/g-C3N4 heterostructures for photocatalytic degradation of organic pollutants
AU - Zhu, Zhi
AU - Xing, Xiaohan
AU - Qi, Qi
AU - Shen, Wenjing
AU - Wu, Hongyue
AU - Li, Dongyi
AU - Li, Binrong
AU - Liang, Jialin
AU - Tang, Xu
AU - Zhao, Jun
AU - Li, Hongping
AU - Huo, Pengwei
N1 - This work was financially supported by the National Natural Science Foundation of China (Nos. 22208127, 22108102), the Senior Talent Research Foundation of Jiangsu University (23JDG030), Hong Kong Scholar Program (XJ2020031), and the RGC Postdoctoral Fellowship Scheme of Hong Kong.
Copyright:
© 2023 Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences.
PY - 2023/12
Y1 - 2023/12
N2 - A specific type S-scheme photocatalyst CeO2@N-GO/g-C3N4 was successfully synthesized, resulting in a 2-mercaptobenzothiazole (MBT) degradation rate of 100%, which is more than twice that of g-C3N4 and CeO2. The improved degradation performance can be attributed to the introduction of N-graphene oxide (N-GO), which facilitates the electron transfer. Additionally, the unique Ce4+ → Ce3+ conversion property enhances the charge carrier utilization, and thereby the photocatalytic activity. Furthermore, theoretical calculations suggest the formation of an interfacial internal electric field (IEF) formed between CeO2 (the (200) and (311) planes) and g-C3N4 (the (002) plane) to enhance the delocalization of the charge carriers. Moreover, various photoelectrochemical analyses are employed for the in-depth mechanism on MBT degradation and IEF-induced S-scheme over CeO2@N-GO/g-C3N4, where the differential charge proves the electron transfer path from CeO2 to g-C3N4 that significantly prolongs its lifetime. The radical capture and electron spin resonance (ESR) results proved the existence of the active species of •OH, •O2−, and h+ in the S-scheme photocatalytic system.
AB - A specific type S-scheme photocatalyst CeO2@N-GO/g-C3N4 was successfully synthesized, resulting in a 2-mercaptobenzothiazole (MBT) degradation rate of 100%, which is more than twice that of g-C3N4 and CeO2. The improved degradation performance can be attributed to the introduction of N-graphene oxide (N-GO), which facilitates the electron transfer. Additionally, the unique Ce4+ → Ce3+ conversion property enhances the charge carrier utilization, and thereby the photocatalytic activity. Furthermore, theoretical calculations suggest the formation of an interfacial internal electric field (IEF) formed between CeO2 (the (200) and (311) planes) and g-C3N4 (the (002) plane) to enhance the delocalization of the charge carriers. Moreover, various photoelectrochemical analyses are employed for the in-depth mechanism on MBT degradation and IEF-induced S-scheme over CeO2@N-GO/g-C3N4, where the differential charge proves the electron transfer path from CeO2 to g-C3N4 that significantly prolongs its lifetime. The radical capture and electron spin resonance (ESR) results proved the existence of the active species of •OH, •O2−, and h+ in the S-scheme photocatalytic system.
KW - S-scheme heterojunction
KW - 2-Mercaptobenzothiazole
KW - Internal electric field
KW - Theoretical calculation
KW - N-GO assisted
U2 - 10.1016/j.cjsc.2023.100194
DO - 10.1016/j.cjsc.2023.100194
M3 - Journal article
SN - 0254-5861
VL - 42
SP - 100194
JO - Chinese Journal of Structural Chemistry
JF - Chinese Journal of Structural Chemistry
IS - 12
ER -