Er/Yb doped porous silicon - A novel white light source

Li Luo*, Xiao Xia Zhang, King Fai Li, Kok Wai CHEAH, Jian Xin Shi, Rick W K WONG, Meng Lian Gong

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

56 Citations (Scopus)

Abstract

A constant voltage electrochemical doping method and the efficient upconversion emission of porous silicon (PS):Er/Yb, emitting in the red, green, and ultraviolet regions at room temperature were presented. The beneficial effect of PS as a host matrix for Er-Yb complexes, enhancing the emission processes was observed. The presence of pores allows a greater concentration of Er and Yb to be doped into it. The results show that the efficient enhancement of red and green upconverted emissions and the appearance of UV emission are due to efficient energy transfer between Yb and Er.

Original languageEnglish
Pages (from-to)1664-1667
Number of pages4
JournalAdvanced Materials
Volume16
Issue number18
DOIs
Publication statusPublished - 16 Sept 2004

Scopus Subject Areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Er/Yb doped porous silicon - A novel white light source'. Together they form a unique fingerprint.

Cite this