Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The V_{Ga,280 ps} and the V _{Ga,315 ps} defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300°C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed.