Electron field emission characteristics of electrochemical etched Si tip array

K. L. Ng, J. Yuan, J. T. Cheung, Kok Wai Cheah*

*Corresponding author for this work

Research output: Contribution to journalJournal articlepeer-review

30 Citations (Scopus)


Two-dimensional arrays of Si tips for electron field emission were fabricated using combination of photolithography and electrochemical etching. The array has good uniformity and near optimum shape for field emission. The current-voltage characteristics were measured and fitted with the Fowler-Nordheim model. The derived field enhancement factors are among the best figures of merit for electron field emitters. The result shows that Si tip array fabricated with this process has potential applications in vacuum microelectronics.

Original languageEnglish
Article number6324
Pages (from-to)205-207
Number of pages3
JournalSolid State Communications
Issue number5
Publication statusPublished - Aug 2002

Scopus Subject Areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

User-Defined Keywords

  • A. si tip array
  • E. electron field emission


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