Electron field emission characteristics of electrochemical etched Si tip array

K. L. Ng; J. Yuan; J. T. Cheung; Kok Wai Cheah

doi:10.1016/S0038-1098(02)00287-9

Electron field emission characteristics of electrochemical etched Si tip array

K. L. Ng, J. Yuan, J. T. Cheung, Kok Wai Cheah^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

30 Citations (Scopus)

Abstract

Two-dimensional arrays of Si tips for electron field emission were fabricated using combination of photolithography and electrochemical etching. The array has good uniformity and near optimum shape for field emission. The current-voltage characteristics were measured and fitted with the Fowler-Nordheim model. The derived field enhancement factors are among the best figures of merit for electron field emitters. The result shows that Si tip array fabricated with this process has potential applications in vacuum microelectronics.

Original language	English
Article number	6324
Pages (from-to)	205-207
Number of pages	3
Journal	Solid State Communications
Volume	123
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(02)00287-9
Publication status	Published - Aug 2002

Scopus Subject Areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

User-Defined Keywords

A. si tip array
E. electron field emission

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10.1016/S0038-1098(02)00287-9

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title = "Electron field emission characteristics of electrochemical etched Si tip array",

abstract = "Two-dimensional arrays of Si tips for electron field emission were fabricated using combination of photolithography and electrochemical etching. The array has good uniformity and near optimum shape for field emission. The current-voltage characteristics were measured and fitted with the Fowler-Nordheim model. The derived field enhancement factors are among the best figures of merit for electron field emitters. The result shows that Si tip array fabricated with this process has potential applications in vacuum microelectronics.",

keywords = "A. si tip array, E. electron field emission",

author = "Ng, {K. L.} and J. Yuan and Cheung, {J. T.} and Cheah, {Kok Wai}",

note = "Funding Information: This work is funded by Hong Kong Baptist University FRG fund and Hong Kong Government Earmarked Research Grant.",

year = "2002",

month = aug,

doi = "10.1016/S0038-1098(02)00287-9",

language = "English",

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journal = "Solid State Communications",

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TY - JOUR

T1 - Electron field emission characteristics of electrochemical etched Si tip array

AU - Ng, K. L.

AU - Yuan, J.

AU - Cheung, J. T.

AU - Cheah, Kok Wai

N1 - Funding Information: This work is funded by Hong Kong Baptist University FRG fund and Hong Kong Government Earmarked Research Grant.

PY - 2002/8

Y1 - 2002/8

N2 - Two-dimensional arrays of Si tips for electron field emission were fabricated using combination of photolithography and electrochemical etching. The array has good uniformity and near optimum shape for field emission. The current-voltage characteristics were measured and fitted with the Fowler-Nordheim model. The derived field enhancement factors are among the best figures of merit for electron field emitters. The result shows that Si tip array fabricated with this process has potential applications in vacuum microelectronics.

AB - Two-dimensional arrays of Si tips for electron field emission were fabricated using combination of photolithography and electrochemical etching. The array has good uniformity and near optimum shape for field emission. The current-voltage characteristics were measured and fitted with the Fowler-Nordheim model. The derived field enhancement factors are among the best figures of merit for electron field emitters. The result shows that Si tip array fabricated with this process has potential applications in vacuum microelectronics.

KW - A. si tip array

KW - E. electron field emission

UR - http://www.scopus.com/inward/record.url?scp=0036682801&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(02)00287-9

DO - 10.1016/S0038-1098(02)00287-9

M3 - Journal article

AN - SCOPUS:0036682801

SN - 0038-1098

VL - 123

SP - 205

EP - 207

JO - Solid State Communications

JF - Solid State Communications

IS - 5

M1 - 6324

ER -

Electron field emission characteristics of electrochemical etched Si tip array

Abstract

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