Efficient pattern relocation for EUV blank defect mitigation

Hongbo Zhang, Yuelin Du, Martin D.F. Wong, Rasit O. Topalaglu

Research output: Chapter in book/report/conference proceedingConference proceedingpeer-review

20 Citations (Scopus)

Abstract

Blank defect mitigation is a critical step for extreme ultraviolet (EUV) lithography. Targeting the defective blank, a layout relocation method, to shift and rotate the whole layout pattern to a proper position, has been proved to be an effective way to reduce defect impact. Yet, there is still no published work about how to find the best pattern location to minimize the impact from the buried defects with reasonable defect model and considerable process variation control. In this paper, we successfully present an algorithm that can optimally solve this pattern relocation problem. Experimental results validate our method, and the relocation results with full scale layouts generated from Nangate Open Cell Library has shown great advantages with competitive runtimes compared to the existing commercial tool.
Original languageEnglish
Title of host publication17th Asia and South Pacific Design Automation Conference
PublisherIEEE Canada
Pages719-724
Number of pages6
ISBN (Electronic)9781467307727, 9781467307710
ISBN (Print)9781467307703
DOIs
Publication statusPublished - 30 Jan 2012
Event17th Asia and South Pacific Design Automation Conference, ASP-DAC 2012 - Sydney, NSW, Australia
Duration: 30 Jan 20122 Feb 2012

Publication series

NameProceedings of the ASP-DAC Asia South Pacific Design Automation Conference
PublisherIEEE
ISSN (Print)2153-6961
ISSN (Electronic)2153-697X

Conference

Conference17th Asia and South Pacific Design Automation Conference, ASP-DAC 2012
Period30/01/122/02/12

User-Defined Keywords

  • Layout
  • Runtime
  • Ultraviolet sources
  • Process control
  • Tiles
  • Lithography
  • Complexity theory

Fingerprint

Dive into the research topics of 'Efficient pattern relocation for EUV blank defect mitigation'. Together they form a unique fingerprint.

Cite this