Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

Jing Xiang; Xiangling Li; Yun Ma; Qiang Zhao; Cheuk Lam HO; Wai Yeung WONG

doi:10.1039/c8tc03140a

Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

Jing Xiang, Xiangling Li, Yun Ma, Qiang Zhao, Cheuk Lam HO^*, Wai Yeung WONG

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 10³ to 10⁴ with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications.

Original language	English
Pages (from-to)	11348-11355
Number of pages	8
Journal	Journal of Materials Chemistry C
Volume	6
Issue number	42
DOIs	https://doi.org/10.1039/c8tc03140a
Publication status	Published - 2018

Scopus Subject Areas

Chemistry(all)
Materials Chemistry

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10.1039/c8tc03140a

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@article{05639ebb46d1402ab3ea173b1b5f1e53,

title = "Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers",

abstract = "A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 103 to 104 with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications.",

author = "Jing Xiang and Xiangling Li and Yun Ma and Qiang Zhao and HO, {Cheuk Lam} and WONG, {Wai Yeung}",

note = "Funding Information: We are grateful for the financial support from the Hong Kong Research Grants Council (PolyU 153051/17P), the National Natural Science Foundation of China (project numbers 61274018 and 21174064), the Areas of Excellence Scheme, University Grants Committee of HKSAR (project no. AoE/P-03/ 08), Hong Kong Polytechnic University (1-ZE1C) and Ms Clarea Au for the Endowed Professorship in Energy (847S). C.-L. Ho acknowledges the Hong Kong Research Grants Council (PolyU 123021/17P), the National Natural Science Foundation of China (21504074) and the Hong Kong Polytechnic University (1-BE0Q) for their financial support.",

year = "2018",

doi = "10.1039/c8tc03140a",

language = "English",

volume = "6",

pages = "11348--11355",

journal = "Journal of Materials Chemistry C",

issn = "2050-7526",

publisher = "Royal Society of Chemistry",

number = "42",

}

TY - JOUR

T1 - Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

AU - Xiang, Jing

AU - Li, Xiangling

AU - Ma, Yun

AU - Zhao, Qiang

AU - HO, Cheuk Lam

AU - WONG, Wai Yeung

N1 - Funding Information: We are grateful for the financial support from the Hong Kong Research Grants Council (PolyU 153051/17P), the National Natural Science Foundation of China (project numbers 61274018 and 21174064), the Areas of Excellence Scheme, University Grants Committee of HKSAR (project no. AoE/P-03/ 08), Hong Kong Polytechnic University (1-ZE1C) and Ms Clarea Au for the Endowed Professorship in Energy (847S). C.-L. Ho acknowledges the Hong Kong Research Grants Council (PolyU 123021/17P), the National Natural Science Foundation of China (21504074) and the Hong Kong Polytechnic University (1-BE0Q) for their financial support.

PY - 2018

Y1 - 2018

N2 - A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 103 to 104 with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications.

AB - A series of non-conjugated ferrocene-containing copolymers FcCP1-FcCP3 with a triphenylamine (TPA), benzothiazole (BT) or phenothiazine (PHZ) unit has been designed and synthesized via a facile radical polymerization protocol. The structural, photophysical, electrochemical and memory characteristics of these polymers were systematically studied. All the copolymers exhibited flash memory behaviour with a bistable conductive process, where FcCP1 showed a large ON/OFF current ratio of 103 to 104 with a low threshold voltage of -0.6 V. Such remarkable results suggest that non-conjugated ferrocene-containing copolymers are promising active materials for memory applications.

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U2 - 10.1039/c8tc03140a

DO - 10.1039/c8tc03140a

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SP - 11348

EP - 11355

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 42

ER -

Efficient flash memory devices based on non-conjugated ferrocene-containing copolymers

Abstract

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