Effects of tertiary butyl substitution on the charge transporting properties of rubrene-based films

H. H. Fong, Shu Kong SO*, W. Y. Sham, C. F. Lo, Y. S. Wu, C. H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)

Abstract

The charge transporting properties of rubrene (5,6,11,12- tetraphenylnaphthacene or RB), and a new rubrene-based complex, tetra(t-butyl)-rubrene [2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12- diphenylnaphthacene or TBRB], were examined in the form of amorphous films as functions of electric field and temperature by means of time-of-flight technique. At room temperature, the hole mobility μ for RB is 7-9×10-3 cm2V-1s-1 whereas μ for the more bulky TBRB is about 2×10-3 cm 2V-1s-1. The microscopic conduction mechanism in both materials can be modeled by the Gaussian disorder model in which hopping conduction occurs through a manifold of sites with energetic and positional disorder. The energetic disorder in RB and TBRB is almost identical and is about 78 meV in each case, and is mainly controlled by van der Waals interaction. The t-butyl groups in TBRB induce large fluctuations in the spatial separation among TBRB molecules and result in an increase in the positional disorder, and hence a reduction in the hole mobility.

Original languageEnglish
Pages (from-to)119-123
Number of pages5
JournalChemical Physics
Volume298
Issue number1-3
DOIs
Publication statusPublished - 8 Mar 2004

Scopus Subject Areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

User-Defined Keywords

  • Hole mobility
  • Organic charge transporters
  • Rubrene

Fingerprint

Dive into the research topics of 'Effects of tertiary butyl substitution on the charge transporting properties of rubrene-based films'. Together they form a unique fingerprint.

Cite this