Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor

Shiming Yan; Wen Qiao; Wei Zhong; Chak Tong Au; Youwei Dou

doi:10.1063/1.4865102

Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In₂O₃ diluted magnetic semiconductor

Shiming Yan
, Wen Qiao
, Wei Zhong^*
, Chak Tong Au
, Youwei Dou

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Journal article › peer-review

36 Citations (Scopus)

Abstract

The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In₂O₃ were investigated both experimentally and theoretically. The Fe³⁺ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe²⁺ ions in In₂O₃ can be induced through the creation of oxygen vacancies. The Fe²⁺ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In₂O₃ but also provide a way to tune the magnetic property of Fe-doped In₂O₃ through the control of valence states of dopant and the control of sites for dopant occupation.

Original language	English
Article number	062404
Journal	Applied Physics Letters
Volume	104
Issue number	6
DOIs	https://doi.org/10.1063/1.4865102
Publication status	Published - 2 Oct 2014

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title = "Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor",

abstract = "The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation.",

author = "Shiming Yan and Wen Qiao and Wei Zhong and Au, \{Chak Tong\} and Youwei Dou",

note = "Funded by National Natural Science Foundation of China (funding number: 11174132). ",

year = "2014",

month = oct,

day = "2",

doi = "10.1063/1.4865102",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor

AU - Yan, Shiming

AU - Qiao, Wen

AU - Zhong, Wei

AU - Au, Chak Tong

AU - Dou, Youwei

N1 - Funded by National Natural Science Foundation of China (funding number: 11174132).

PY - 2014/10/2

Y1 - 2014/10/2

N2 - The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation.

AB - The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation.

UR - https://www.scopus.com/pages/publications/84906228239

U2 - 10.1063/1.4865102

DO - 10.1063/1.4865102

M3 - Journal article

AN - SCOPUS:84906228239

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062404

ER -

Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In₂O₃ diluted magnetic semiconductor

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