Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor

Shiming Yan, Wen Qiao, Wei Zhong*, Chak Tong AU, Youwei Dou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation.

Original languageEnglish
Article number062404
JournalApplied Physics Letters
Volume104
Issue number6
DOIs
Publication statusPublished - 2 Oct 2014

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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