TY - JOUR
T1 - Effects of electron transport material on blue organic light-emitting diode with fluorescent dopant of BCzVBi
AU - Meng, Mei
AU - Song, Wook
AU - Kim, You Hyun
AU - Lee, Sang Youn
AU - Jhun, Chul Gyu
AU - Zhu, Fu Rong
AU - Ryu, Dae Hyun
AU - Kim, Woo Young
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013/1
Y1 - 2013/1
N2 - High efficiency blue organic light emitting diodes (OLEDs), based on 2-me-thyl-9,10-di(2-naphthyl) anthracene (MADN) doped with 4,4′-bis(9- ethyl-3-carbazovinylene)-1,1′-biphenyl (BCzVBi), were fabricated using two different electron transport layers (ETLs) of tris(8-hydroxyquinolino)-aluminum (Alq3) and 4,7-di-phenyl-1,10-phenanthroline (Bphen). Bphen ETL layers favored the efficient hole-electron recombination in the emissive layer of the BCzVBi-doped blue OLEDs, leading to high luminous efficiency and quantum efficiency of 8.34 cd/A at 100 mA/cm2 and 5.73% at 100 cd/m 2, respectively. Maximum luminance of blue OLED with Bphen ETL and Alq3 ETL were 10670 cd/m2, and CIExy coordinates of blue OLEDs were (0.180, 0279) and (0.155, 0.212) at 100 cd/m 2.
AB - High efficiency blue organic light emitting diodes (OLEDs), based on 2-me-thyl-9,10-di(2-naphthyl) anthracene (MADN) doped with 4,4′-bis(9- ethyl-3-carbazovinylene)-1,1′-biphenyl (BCzVBi), were fabricated using two different electron transport layers (ETLs) of tris(8-hydroxyquinolino)-aluminum (Alq3) and 4,7-di-phenyl-1,10-phenanthroline (Bphen). Bphen ETL layers favored the efficient hole-electron recombination in the emissive layer of the BCzVBi-doped blue OLEDs, leading to high luminous efficiency and quantum efficiency of 8.34 cd/A at 100 mA/cm2 and 5.73% at 100 cd/m 2, respectively. Maximum luminance of blue OLED with Bphen ETL and Alq3 ETL were 10670 cd/m2, and CIExy coordinates of blue OLEDs were (0.180, 0279) and (0.155, 0.212) at 100 cd/m 2.
KW - Blue OLED
KW - Concentration quenching
KW - Dopant
KW - Electron transport layer (ETL)
KW - Hole-electron recombination
UR - http://www.scopus.com/inward/record.url?scp=84876273759&partnerID=8YFLogxK
U2 - 10.1166/jnn.2013.6703
DO - 10.1166/jnn.2013.6703
M3 - Journal article
C2 - 23646729
AN - SCOPUS:84876273759
SN - 1533-4880
VL - 13
SP - 294
EP - 299
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 1
ER -