Effect of surface electronic properties of ITO on luminance efficiency of OLED

Furong Zhu; Hu Jian Qiao; Liew Yoon Fei; Kian Soo Ong; Xiaotao Hao

doi:10.1117/12.523950

Effect of surface electronic properties of ITO on luminance efficiency of OLED

Furong Zhu^*
, Hu Jian Qiao
, Liew Yoon Fei
, Kian Soo Ong
, Xiaotao Hao

^*Corresponding author for this work

Department of Physics

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

Abstract

We report the results of an effort to understand the effect of surface electronic structure of indium tin oxide (ITO) on luminance efficiency of organic light-emitting devices (OLED)s. Nitric oxide (NO) plasma was used to modify the ITO. NO plasma induced an increase in the sheet resistance of ITO. The surface electronic structure of ITO was studied using X-ray photoelectron spectroscopy. An approximately 4-nm thick low conductivity layer with a production of N-O type species was formed near the ITO surface region. It is demonstrated that the barrier for hole-injection from an ITO anode to a hole-transporting layer can be engineered by NO plasma treatment. The increase in luminance efficiency of the OLEDs reflects an improved current balance in the device.

Original language	English
Title of host publication	Photonics: Design, Technology, and Packaging
Editors	Chennupati Jagadish, Kent D. Choquette, Benjamin J. Eggleton, Brett D. Nener, Keith A. Nugent
Publisher	SPIE
Pages	163-173
Number of pages	11
DOIs	https://doi.org/10.1117/12.523950
Publication status	Published - 25 Mar 2004
Event	Microelectronics, Mems, and Nanotechnology - Perth, WA, Australia Duration: 10 Dec 2003 → 12 Dec 2003 https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5277.toc (Conference proceedings)

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Volume	5277
ISSN (Print)	0277-786X

Conference

Conference	Microelectronics, Mems, and Nanotechnology
Country/Territory	Australia
City	Perth, WA
Period	10/12/03 → 12/12/03
Internet address	https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5277.toc (Conference proceedings)

User-Defined Keywords

Indium tin oxide
Organic light emitting devices
XPS

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10.1117/12.523950

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Zhu, F., Qiao, H. J., Fei, L. Y., Ong, K. S., & Hao, X. (2004). Effect of surface electronic properties of ITO on luminance efficiency of OLED. In C. Jagadish, K. D. Choquette, B. J. Eggleton, B. D. Nener, & K. A. Nugent (Eds.), Photonics: Design, Technology, and Packaging (pp. 163-173). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5277). SPIE. https://doi.org/10.1117/12.523950

Zhu, Furong ; Qiao, Hu Jian ; Fei, Liew Yoon et al. / Effect of surface electronic properties of ITO on luminance efficiency of OLED. Photonics: Design, Technology, and Packaging. editor / Chennupati Jagadish ; Kent D. Choquette ; Benjamin J. Eggleton ; Brett D. Nener ; Keith A. Nugent. SPIE, 2004. pp. 163-173 (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{34e253aa86c14634932374e1bd2ea729,

title = "Effect of surface electronic properties of ITO on luminance efficiency of OLED",

abstract = "We report the results of an effort to understand the effect of surface electronic structure of indium tin oxide (ITO) on luminance efficiency of organic light-emitting devices (OLED)s. Nitric oxide (NO) plasma was used to modify the ITO. NO plasma induced an increase in the sheet resistance of ITO. The surface electronic structure of ITO was studied using X-ray photoelectron spectroscopy. An approximately 4-nm thick low conductivity layer with a production of N-O type species was formed near the ITO surface region. It is demonstrated that the barrier for hole-injection from an ITO anode to a hole-transporting layer can be engineered by NO plasma treatment. The increase in luminance efficiency of the OLEDs reflects an improved current balance in the device.",

keywords = "Indium tin oxide, Organic light emitting devices, XPS",

author = "Furong Zhu and Qiao, \{Hu Jian\} and Fei, \{Liew Yoon\} and Ong, \{Kian Soo\} and Xiaotao Hao",

note = "{\textcopyright} (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE); Microelectronics, Mems, and Nanotechnology ; Conference date: 10-12-2003 Through 12-12-2003",

year = "2004",

month = mar,

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doi = "10.1117/12.523950",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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pages = "163--173",

editor = "Chennupati Jagadish and \{ Choquette\}, \{Kent D.\} and Eggleton, \{Benjamin J.\} and Nener, \{Brett D.\} and Nugent, \{ Keith A.\}",

booktitle = "Photonics: Design, Technology, and Packaging",

address = "United States",

url = "https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5277.toc",

}

Zhu, F, Qiao, HJ, Fei, LY, Ong, KS & Hao, X 2004, Effect of surface electronic properties of ITO on luminance efficiency of OLED. in C Jagadish, KD Choquette, BJ Eggleton, BD Nener & KA Nugent (eds), Photonics: Design, Technology, and Packaging. Proceedings of SPIE - The International Society for Optical Engineering, vol. 5277, SPIE, pp. 163-173, Microelectronics, Mems, and Nanotechnology, Perth, WA, Australia, 10/12/03. https://doi.org/10.1117/12.523950

Effect of surface electronic properties of ITO on luminance efficiency of OLED. / Zhu, Furong; Qiao, Hu Jian; Fei, Liew Yoon et al.
Photonics: Design, Technology, and Packaging. ed. / Chennupati Jagadish; Kent D. Choquette; Benjamin J. Eggleton; Brett D. Nener; Keith A. Nugent. SPIE, 2004. p. 163-173 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 5277).

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

TY - GEN

T1 - Effect of surface electronic properties of ITO on luminance efficiency of OLED

AU - Zhu, Furong

AU - Qiao, Hu Jian

AU - Fei, Liew Yoon

AU - Ong, Kian Soo

AU - Hao, Xiaotao

N1 - © (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE)

PY - 2004/3/25

Y1 - 2004/3/25

N2 - We report the results of an effort to understand the effect of surface electronic structure of indium tin oxide (ITO) on luminance efficiency of organic light-emitting devices (OLED)s. Nitric oxide (NO) plasma was used to modify the ITO. NO plasma induced an increase in the sheet resistance of ITO. The surface electronic structure of ITO was studied using X-ray photoelectron spectroscopy. An approximately 4-nm thick low conductivity layer with a production of N-O type species was formed near the ITO surface region. It is demonstrated that the barrier for hole-injection from an ITO anode to a hole-transporting layer can be engineered by NO plasma treatment. The increase in luminance efficiency of the OLEDs reflects an improved current balance in the device.

AB - We report the results of an effort to understand the effect of surface electronic structure of indium tin oxide (ITO) on luminance efficiency of organic light-emitting devices (OLED)s. Nitric oxide (NO) plasma was used to modify the ITO. NO plasma induced an increase in the sheet resistance of ITO. The surface electronic structure of ITO was studied using X-ray photoelectron spectroscopy. An approximately 4-nm thick low conductivity layer with a production of N-O type species was formed near the ITO surface region. It is demonstrated that the barrier for hole-injection from an ITO anode to a hole-transporting layer can be engineered by NO plasma treatment. The increase in luminance efficiency of the OLEDs reflects an improved current balance in the device.

KW - Indium tin oxide

KW - Organic light emitting devices

KW - XPS

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

SP - 163

EP - 173

BT - Photonics: Design, Technology, and Packaging

A2 - Jagadish, Chennupati

A2 - Choquette, Kent D.

A2 - Eggleton, Benjamin J.

A2 - Nener, Brett D.

A2 - Nugent, Keith A.

PB - SPIE

T2 - Microelectronics, Mems, and Nanotechnology

Y2 - 10 December 2003 through 12 December 2003

ER -

Effect of surface electronic properties of ITO on luminance efficiency of OLED

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