Effect of ITO carrier concentration on the performance of organic light-emitting diodes

  • Furong Zhu
  • , Keran Zhang
  • , C. H. A. Huan
  • , A. T. S. Wee
  • , Ewald Guenther
  • , Chua Soo Jin

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

The indium tin oxide (ITO) anodes for organic light emitting diode (OLED) were made from an oxidised target with In2O3 and SnO2 in a weight proportion of 9:1 using the RF magnetron sputtering method. The comparable ITO anodes with different carrier concentrations were prepared by varying the hydrogen partial pressure during film deposition. The current-luminance-voltage characteristics of the devices indicated that a high carrier concentration in ITO plays a role in improving OLED performance. A maximum efficiency of 3.8 cd/A was achieved when an ITO anode with a higher carrier concentration of 9×1020 cm-3 was used in a fluorene based OLED. This efficiency is about 1.5 times higher than that of an identical device made with an ITO anode having a lower carrier concentration of 5×1020 cm-3. The increase in electroluminescent efficiency reflects an enhanced hole-injection in the device. We consider that enhanced hole injection is due to the reduced band bending in ITO when it has a high carrier concentration.

Original languageEnglish
Article number1111
JournalMRS Online Proceedings Library
Volume598
Issue number1
DOIs
Publication statusPublished - Dec 1999
EventElectrical, Optical, and Magnetic Properties of Organic Solid-State Materials V - Boston, United States
Duration: 28 Nov 19993 Dec 1999

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