Abstract
The indium tin oxide (ITO) anodes for organic light emitting diode (OLED) were made from an oxidised target with In2O3 and SnO2 in a weight proportion of 9:1 using the RF magnetron sputtering method. The comparable ITO anodes with different carrier concentrations were prepared by varying the hydrogen partial pressure during film deposition. The current-luminance-voltage characteristics of the devices indicated that a high carrier concentration in ITO plays a role in improving OLED performance. A maximum efficiency of 3.8 cd/A was achieved when an ITO anode with a higher carrier concentration of 9×1020 cm-3 was used in a fluorene based OLED. This efficiency is about 1.5 times higher than that of an identical device made with an ITO anode having a lower carrier concentration of 5×1020 cm-3. The increase in electroluminescent efficiency reflects an enhanced hole-injection in the device. We consider that enhanced hole injection is due to the reduced band bending in ITO when it has a high carrier concentration.
| Original language | English |
|---|---|
| Article number | 1111 |
| Journal | MRS Online Proceedings Library |
| Volume | 598 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Dec 1999 |
| Event | Electrical, Optical, and Magnetic Properties of Organic Solid-State Materials V - Boston, United States Duration: 28 Nov 1999 → 3 Dec 1999 |
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