Effect of fluorine substitution on naphtho[2,1-b:3,4-b′]bis[1]-benzothiophene-derived semiconductors for transistor application

Zhaoguang Li, Ji Zhang, Weifeng Zhang, Lei Guo, Jianyao Huang, Gui Yu*, Ricky M S WONG

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A novel series of air-stable, fluorinated naphtho [2,1-b:3,4-b′]bis [1]-benzothiophenes bearing various lateral alkoxy-substituents, NBBTF-n (n = 8, 10, and 12) and its unsubstituted analogue, NBBT-10 were synthesized and investigated with field-effect transistor properties. Fluorine substitution affords desirable properties including high melting transition, high thermal stability and low-lying highest occupied molecular orbital (HOMO) energy levels for air-stable semiconductors. The OFET devices based on annealed NBBTF-10 films exhibit superior hole transport with mobility up to 0.35 cm2 V-1 s-1 to that of NBBT-10, attributed to the close molecular stacking induced by fluorine substitution.

Original languageEnglish
Pages (from-to)47-53
Number of pages7
JournalOrganic Electronics
Volume32
DOIs
Publication statusPublished - 1 May 2016

Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

User-Defined Keywords

  • Fluorine substitution
  • Hole mobility
  • Organic field-effect transistor
  • Organic semiconductor
  • Thienoacene

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