Abstract
A novel series of air-stable, fluorinated naphtho [2,1-b:3,4-b′]bis [1]-benzothiophenes bearing various lateral alkoxy-substituents, NBBTF-n (n = 8, 10, and 12) and its unsubstituted analogue, NBBT-10 were synthesized and investigated with field-effect transistor properties. Fluorine substitution affords desirable properties including high melting transition, high thermal stability and low-lying highest occupied molecular orbital (HOMO) energy levels for air-stable semiconductors. The OFET devices based on annealed NBBTF-10 films exhibit superior hole transport with mobility up to 0.35 cm2 V-1 s-1 to that of NBBT-10, attributed to the close molecular stacking induced by fluorine substitution.
Original language | English |
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Pages (from-to) | 47-53 |
Number of pages | 7 |
Journal | Organic Electronics |
Volume | 32 |
DOIs | |
Publication status | Published - 1 May 2016 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
User-Defined Keywords
- Fluorine substitution
- Hole mobility
- Organic field-effect transistor
- Organic semiconductor
- Thienoacene