Effect of blend layer morphology on performance of ZnPc: C 60-based photovoltaic cells

Wenjin Zeng; Kian Soon Yong; Zhi Ming Kam; Fu Rong ZHU; Yuning Li

doi:10.1063/1.3493177

Effect of blend layer morphology on performance of ZnPc: C ₆₀-based photovoltaic cells

Wenjin Zeng
, Kian Soon Yong
, Zhi Ming Kam
, Fu Rong ZHU
, Yuning Li^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

56 Citations (Scopus)

Abstract

Zinc phthalocyanine (ZnPc): fullerene- C₆₀ (C₆₀) -based organic photovoltaic (OPV) with high power conversion efficiency (PCE) are fabricated. Homogeneously distributed grains of ∼40-50 nm are observed for the ZnPc: C₆₀ blend layer deposited on bare indium-tin oxide (ITO) substrates. In contrast, the blend layer form grains of smaller lateral extensions (∼20-30 nm) on 3, 4-polyethylenedioxythiophene: polystyrenesulfonate modified ITO substrates. OPV fabricated on the former substrates show PCE of up to 3.9% that is about twice the PCE (1.9%) obtained for the devices on the latter substrates. This effect can be explained by better transport properties and reduced charge recombination of the blend layer on the bare ITO.

Original language	English
Article number	133304
Journal	Applied Physics Letters
Volume	97
Issue number	13
DOIs	https://doi.org/10.1063/1.3493177
Publication status	Published - 27 Sept 2010

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10.1063/1.3493177

Cite this

@article{8bd307370dc741848c5be37e24926e4e,

title = "Effect of blend layer morphology on performance of ZnPc: C 60-based photovoltaic cells",

abstract = "Zinc phthalocyanine (ZnPc): fullerene- C60 (C60) -based organic photovoltaic (OPV) with high power conversion efficiency (PCE) are fabricated. Homogeneously distributed grains of ∼40-50 nm are observed for the ZnPc: C60 blend layer deposited on bare indium-tin oxide (ITO) substrates. In contrast, the blend layer form grains of smaller lateral extensions (∼20-30 nm) on 3, 4-polyethylenedioxythiophene: polystyrenesulfonate modified ITO substrates. OPV fabricated on the former substrates show PCE of up to 3.9\% that is about twice the PCE (1.9\%) obtained for the devices on the latter substrates. This effect can be explained by better transport properties and reduced charge recombination of the blend layer on the bare ITO.",

author = "Wenjin Zeng and Yong, \{Kian Soon\} and Kam, \{Zhi Ming\} and ZHU, \{Fu Rong\} and Yuning Li",

note = "Funding Information: The current work was supported by Agency of Science, Technology and Research , Institute of Material and Research Engineering (IMRE), and BASF Co. ",

year = "2010",

month = sep,

day = "27",

doi = "10.1063/1.3493177",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Effect of blend layer morphology on performance of ZnPc

T2 - C 60-based photovoltaic cells

AU - Zeng, Wenjin

AU - Yong, Kian Soon

AU - Kam, Zhi Ming

AU - ZHU, Fu Rong

AU - Li, Yuning

N1 - Funding Information: The current work was supported by Agency of Science, Technology and Research , Institute of Material and Research Engineering (IMRE), and BASF Co.

PY - 2010/9/27

Y1 - 2010/9/27

N2 - Zinc phthalocyanine (ZnPc): fullerene- C60 (C60) -based organic photovoltaic (OPV) with high power conversion efficiency (PCE) are fabricated. Homogeneously distributed grains of ∼40-50 nm are observed for the ZnPc: C60 blend layer deposited on bare indium-tin oxide (ITO) substrates. In contrast, the blend layer form grains of smaller lateral extensions (∼20-30 nm) on 3, 4-polyethylenedioxythiophene: polystyrenesulfonate modified ITO substrates. OPV fabricated on the former substrates show PCE of up to 3.9% that is about twice the PCE (1.9%) obtained for the devices on the latter substrates. This effect can be explained by better transport properties and reduced charge recombination of the blend layer on the bare ITO.

AB - Zinc phthalocyanine (ZnPc): fullerene- C60 (C60) -based organic photovoltaic (OPV) with high power conversion efficiency (PCE) are fabricated. Homogeneously distributed grains of ∼40-50 nm are observed for the ZnPc: C60 blend layer deposited on bare indium-tin oxide (ITO) substrates. In contrast, the blend layer form grains of smaller lateral extensions (∼20-30 nm) on 3, 4-polyethylenedioxythiophene: polystyrenesulfonate modified ITO substrates. OPV fabricated on the former substrates show PCE of up to 3.9% that is about twice the PCE (1.9%) obtained for the devices on the latter substrates. This effect can be explained by better transport properties and reduced charge recombination of the blend layer on the bare ITO.

UR - https://www.scopus.com/pages/publications/77957662956

U2 - 10.1063/1.3493177

DO - 10.1063/1.3493177

M3 - Journal article

AN - SCOPUS:77957662956

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 133304

ER -

Effect of blend layer morphology on performance of ZnPc: C ₆₀-based photovoltaic cells

Abstract

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