Effect of anode carrier concentration on OLED performance

Jianqiao Hu*, Furong Zhu, Li Wei Tan, Kian Soo Ong, Xiaotao Hao

*Corresponding author for this work

Research output: Contribution to conferenceConference paperpeer-review

Abstract

A study was carried out to understand the effect of carrier concentration in anode on the electroluminescent performance of the OLEDs. A set of indium tin oxide (ITO) films with similar sheet resistance but different carrier concentrations was fabricated by radio frequency magnetron sputtering using a hydrogen-argon gas mixture at a process temperature of ∼60°C. The surface electronic structure of ITO was found to be relevant to the carrier concentration in ITO film, which is crucial for the carrier injection. A set of identical OLEDs was fabricated on ITO films with different carrier concentrations. It is found that the anode contact property at ITO/organic interface can be optimized by controlling ITO bulk carrier concentrations and its surface properties through surface modification. The current density-luminance-voltage characteristics of the devices reveal that the carrier concentration in ITO also plays a role in improving the device performance. The results and findings of this work have provided a technical guidance and fundamental insight for engineering the ITO surface electronic properties that are desired for an efficient and durable OLED.

Original languageEnglish
Pages707-710
Number of pages4
Publication statusPublished - Dec 2005
EventIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan
Duration: 6 Dec 20059 Dec 2005

Conference

ConferenceIDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Country/TerritoryJapan
CityTakamatsu
Period6/12/059/12/05

Scopus Subject Areas

  • Engineering(all)

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