Effect of annealing on the performance of CrO3/ZnO light emitting diodes

Y. Y. Xi, A. M.C. Ng, Y. F. Hsu, A. B. Djurišić, B. Q. Huang, L. Ge, X. Y. Chen, W. K. Chan, Hoi Lam TAM, Kok Wai CHEAH

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13 Citations (Scopus)

Abstract

Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.

Original languageEnglish
Article number203502
JournalApplied Physics Letters
Volume94
Issue number20
DOIs
Publication statusPublished - 2009

Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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