Effect of annealing on the performance of CrO3/ZnO light emitting diodes

Y. Y. Xi; A. M.C. Ng; Y. F. Hsu; A. B. Djurišić; B. Q. Huang; L. Ge; X. Y. Chen; W. K. Chan; Hoi Lam TAM; Kok Wai CHEAH

doi:10.1063/1.3140962

Effect of annealing on the performance of CrO₃/ZnO light emitting diodes

Y. Y. Xi, A. M.C. Ng, Y. F. Hsu, A. B. Djurišić, B. Q. Huang, L. Ge, X. Y. Chen, W. K. Chan, Hoi Lam TAM, Kok Wai CHEAH

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Heterojunction CrO₃/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.

Original language	English
Article number	203502
Journal	Applied Physics Letters
Volume	94
Issue number	20
DOIs	https://doi.org/10.1063/1.3140962
Publication status	Published - 2009

Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3140962

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title = "Effect of annealing on the performance of CrO3/ZnO light emitting diodes",

abstract = "Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.",

author = "Xi, {Y. Y.} and Ng, {A. M.C.} and Hsu, {Y. F.} and Djuri{\v s}i{\'c}, {A. B.} and Huang, {B. Q.} and L. Ge and Chen, {X. Y.} and Chan, {W. K.} and TAM, {Hoi Lam} and CHEAH, {Kok Wai}",

note = "Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements.",

year = "2009",

doi = "10.1063/1.3140962",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

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TY - JOUR

T1 - Effect of annealing on the performance of CrO3/ZnO light emitting diodes

AU - Xi, Y. Y.

AU - Ng, A. M.C.

AU - Hsu, Y. F.

AU - Djurišić, A. B.

AU - Huang, B. Q.

AU - Ge, L.

AU - Chen, X. Y.

AU - Chan, W. K.

AU - TAM, Hoi Lam

AU - CHEAH, Kok Wai

N1 - Funding Information: Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, Outstanding Young Researcher Award (administrated by The University of Hong Kong), Hung Hing Ying Physical Sciences Research Fund, and Innovation & Technology Fund (Grant No. ITS/129/08) is acknowledged. The authors would like to thank Professor K. Y. Chan for the use of equipment for EIS measurements.

PY - 2009

Y1 - 2009

N2 - Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.

AB - Heterojunction CrO3/ZnO light emitting diodes have been fabricated. Their performance was investigated for different annealing temperature for ZnO nanorods. Annealing in oxygen atmosphere had significant influence on carrier concentration in the nanorods, as well as on the emission spectra of the nanorods. Surprisingly, annealing conditions, which yield the lowest band edge-to-defect emission ratio in the photoluminescence spectra, result in the highest band edge-to-defect emission ratio in the electroluminescence spectra. The influence of the native defects on ZnO light emitting diode performance is discussed.

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U2 - 10.1063/1.3140962

DO - 10.1063/1.3140962

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VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

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ER -

Effect of annealing on the performance of CrO₃/ZnO light emitting diodes

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