Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process

Ruiqi Tian; Xiaoping Tang; D. F. Wong

doi:10.1145/369691.369750

Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process

Ruiqi Tian
, Xiaoping Tang
, D. F. Wong

Office of the Provost

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

12 Citations (Scopus)

Abstract

Manufacturability of a design that is processed with shallow trench isolation (STI) depends on the uniformity of the chemical-mechanical polishing (CMP) step in STI. The CMP step in STI is a dual-material polish, for which all previous studies on dummy feature placement for single-material polish are not applicable. Based on recent semi-physical models of polish pad bending, local polish pad compression, and different polish rates for materials present in a dual-material polish, this paper derives a time-dependent relation between post-CMP topography and layout pattern density for CMP in STI. Using the dependencies derived, the first formulation of dummy feature placement for CMP in STI is given as a nonlinear programming problem. An iterative approach is proposed to solve the dummy feature placement problem. Computational experience on four layouts from Motorola is given.

Original language	English
Title of host publication	ISPD '01
Subtitle of host publication	Proceedings of the 2001 international symposium on Physical design
Publisher	Association for Computing Machinery (ACM)
Pages	118-123
Number of pages	6
ISBN (Print)	9781581133479
DOIs	https://doi.org/10.1145/369691.369750
Publication status	Published - Apr 2001
Event	10th International Symposium on Physical Design, ISPD 2001 - Sonoma, United States Duration: 1 Apr 2001 → 4 Apr 2001 https://ispd.cc/ispd2024/slides/ispd2001.html (Conference program) https://dl.acm.org/doi/proceedings/10.1145/369691 (Conference proceedings)

Publication series

Name	Proceedings of the International Symposium on Physical Design, ISPD

Conference

Conference	10th International Symposium on Physical Design, ISPD 2001
Country/Territory	United States
City	Sonoma
Period	1/04/01 → 4/04/01
Internet address	https://ispd.cc/ispd2024/slides/ispd2001.html (Conference program) https://dl.acm.org/doi/proceedings/10.1145/369691 (Conference proceedings)

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10.1145/369691.369750

Cite this

Tian, R., Tang, X., & Wong, D. F. (2001). Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process. In ISPD '01: Proceedings of the 2001 international symposium on Physical design (pp. 118-123). (Proceedings of the International Symposium on Physical Design, ISPD). Association for Computing Machinery (ACM). https://doi.org/10.1145/369691.369750

@inproceedings{fd7778cbc42b47d89ea673373c204b2e,

title = "Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process",

abstract = "Manufacturability of a design that is processed with shallow trench isolation (STI) depends on the uniformity of the chemical-mechanical polishing (CMP) step in STI. The CMP step in STI is a dual-material polish, for which all previous studies on dummy feature placement for single-material polish are not applicable. Based on recent semi-physical models of polish pad bending, local polish pad compression, and different polish rates for materials present in a dual-material polish, this paper derives a time-dependent relation between post-CMP topography and layout pattern density for CMP in STI. Using the dependencies derived, the first formulation of dummy feature placement for CMP in STI is given as a nonlinear programming problem. An iterative approach is proposed to solve the dummy feature placement problem. Computational experience on four layouts from Motorola is given.",

author = "Ruiqi Tian and Xiaoping Tang and Wong, \{D. F.\}",

note = "Funding information: This work was partially supported by the National Science Foundation under grant CCR-9912390. Publisher copyright: {\textcopyright} 2001 ACM; 10th International Symposium on Physical Design, ISPD 2001 ; Conference date: 01-04-2001 Through 04-04-2001",

year = "2001",

month = apr,

doi = "10.1145/369691.369750",

language = "English",

isbn = "9781581133479",

series = "Proceedings of the International Symposium on Physical Design, ISPD",

publisher = "Association for Computing Machinery (ACM)",

pages = "118--123",

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Tian, R, Tang, X & Wong, DF 2001, Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process. in ISPD '01: Proceedings of the 2001 international symposium on Physical design. Proceedings of the International Symposium on Physical Design, ISPD, Association for Computing Machinery (ACM), pp. 118-123, 10th International Symposium on Physical Design, ISPD 2001, Sonoma, California, United States, 1/04/01. https://doi.org/10.1145/369691.369750

Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process. / Tian, Ruiqi; Tang, Xiaoping; Wong, D. F.
ISPD '01: Proceedings of the 2001 international symposium on Physical design. Association for Computing Machinery (ACM), 2001. p. 118-123 (Proceedings of the International Symposium on Physical Design, ISPD).

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

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AU - Tian, Ruiqi

AU - Tang, Xiaoping

AU - Wong, D. F.

PY - 2001/4

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N2 - Manufacturability of a design that is processed with shallow trench isolation (STI) depends on the uniformity of the chemical-mechanical polishing (CMP) step in STI. The CMP step in STI is a dual-material polish, for which all previous studies on dummy feature placement for single-material polish are not applicable. Based on recent semi-physical models of polish pad bending, local polish pad compression, and different polish rates for materials present in a dual-material polish, this paper derives a time-dependent relation between post-CMP topography and layout pattern density for CMP in STI. Using the dependencies derived, the first formulation of dummy feature placement for CMP in STI is given as a nonlinear programming problem. An iterative approach is proposed to solve the dummy feature placement problem. Computational experience on four layouts from Motorola is given.

AB - Manufacturability of a design that is processed with shallow trench isolation (STI) depends on the uniformity of the chemical-mechanical polishing (CMP) step in STI. The CMP step in STI is a dual-material polish, for which all previous studies on dummy feature placement for single-material polish are not applicable. Based on recent semi-physical models of polish pad bending, local polish pad compression, and different polish rates for materials present in a dual-material polish, this paper derives a time-dependent relation between post-CMP topography and layout pattern density for CMP in STI. Using the dependencies derived, the first formulation of dummy feature placement for CMP in STI is given as a nonlinear programming problem. An iterative approach is proposed to solve the dummy feature placement problem. Computational experience on four layouts from Motorola is given.

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Tian R, Tang X, Wong DF. Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process. In ISPD '01: Proceedings of the 2001 international symposium on Physical design. Association for Computing Machinery (ACM). 2001. p. 118-123. (Proceedings of the International Symposium on Physical Design, ISPD). doi: 10.1145/369691.369750

Dummy feature placement for chemical-mechanical polishing uniformity in a shallow trench isolation process

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