Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor

C. Pramanik; T. Islam; H. Saha; J. Bhattacharya; S. Banerjee; S. Dey

doi:10.1109/ICVD.2005.77

Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor

C. Pramanik^*, T. Islam, H. Saha, J. Bhattacharya, S. Banerjee, S. Dey

^*Corresponding author for this work

Academy of Music

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

9 Citations (Scopus)

Abstract

Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20°C to 80°C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA.A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.

Original language	English
Title of host publication	Proceedings of the 18th International Conference on VLSI Design
Place of Publication	California
Publisher	IEEE
Pages	235-240
Number of pages	6
ISBN (Print)	0769522645
DOIs	https://doi.org/10.1109/ICVD.2005.77
Publication status	Published - 3 Jan 2005
Event	18th International Conference on VLSI Design: Power Aware Design of VLSI Systems - Kolkata, India Duration: 3 Jan 2005 → 7 Jan 2005 https://ieeexplore.ieee.org/xpl/conhome/9501/proceeding (Conference proceeding)

Publication series

Name	Proceedings of the IEEE International Conference on VLSI Design
Publisher	IEEE
ISSN (Print)	1063-9667
ISSN (Electronic)	2380-6923

Conference

Conference	18th International Conference on VLSI Design: Power Aware Design of VLSI Systems
Country/Territory	India
City	Kolkata
Period	3/01/05 → 7/01/05
Internet address	https://ieeexplore.ieee.org/xpl/conhome/9501/proceeding (Conference proceeding)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ICVD.2005.77

Cite this

Pramanik, C., Islam, T., Saha, H., Bhattacharya, J., Banerjee, S., & Dey, S. (2005). Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor. In Proceedings of the 18th International Conference on VLSI Design (pp. 235-240). (Proceedings of the IEEE International Conference on VLSI Design). IEEE. https://doi.org/10.1109/ICVD.2005.77

@inproceedings{31b656b0b9f84af882dbddb1de3cce2e,

title = "Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor",

abstract = "Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20°C to 80°C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA.A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.",

author = "C. Pramanik and T. Islam and H. Saha and J. Bhattacharya and S. Banerjee and S. Dey",

note = "The authors would like to thank ISRO-STC and AICTE for providing financial help to carry out the project. Publisher Copyright: {\textcopyright} 2005 by The Institute of Electrical and Electronics Engineers, Inc.; 18th International Conference on VLSI Design: Power Aware Design of VLSI Systems ; Conference date: 03-01-2005 Through 07-01-2005",

year = "2005",

month = jan,

day = "3",

doi = "10.1109/ICVD.2005.77",

language = "English",

isbn = "0769522645",

series = "Proceedings of the IEEE International Conference on VLSI Design",

publisher = "IEEE",

pages = "235--240",

booktitle = "Proceedings of the 18th International Conference on VLSI Design",

address = "United States",

url = "https://ieeexplore.ieee.org/xpl/conhome/9501/proceeding",

}

Pramanik, C, Islam, T, Saha, H, Bhattacharya, J, Banerjee, S & Dey, S 2005, Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor. in Proceedings of the 18th International Conference on VLSI Design. Proceedings of the IEEE International Conference on VLSI Design, IEEE, California, pp. 235-240, 18th International Conference on VLSI Design: Power Aware Design of VLSI Systems, Kolkata, India, 3/01/05. https://doi.org/10.1109/ICVD.2005.77

Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor. / Pramanik, C.; Islam, T.; Saha, H. et al.
Proceedings of the 18th International Conference on VLSI Design. California: IEEE, 2005. p. 235-240 (Proceedings of the IEEE International Conference on VLSI Design).

Research output: Chapter in book/report/conference proceeding › Conference proceeding › peer-review

TY - GEN

T1 - Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor

AU - Pramanik, C.

AU - Islam, T.

AU - Saha, H.

AU - Bhattacharya, J.

AU - Banerjee, S.

AU - Dey, S.

N1 - The authors would like to thank ISRO-STC and AICTE for providing financial help to carry out the project. Publisher Copyright: © 2005 by The Institute of Electrical and Electronics Engineers, Inc.

PY - 2005/1/3

Y1 - 2005/1/3

N2 - Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20°C to 80°C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA.A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.

AB - Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20°C to 80°C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA.A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.

UR - http://www.scopus.com/inward/record.url?scp=27944491640&partnerID=8YFLogxK

UR - https://ieeexplore.ieee.org/document/1383282/authors#authors

U2 - 10.1109/ICVD.2005.77

DO - 10.1109/ICVD.2005.77

M3 - Conference proceeding

AN - SCOPUS:27944491640

SN - 0769522645

T3 - Proceedings of the IEEE International Conference on VLSI Design

SP - 235

EP - 240

BT - Proceedings of the 18th International Conference on VLSI Design

PB - IEEE

CY - California

T2 - 18th International Conference on VLSI Design: Power Aware Design of VLSI Systems

Y2 - 3 January 2005 through 7 January 2005

ER -

Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor

Abstract

Publication series

Conference

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this