Abstract
Polymeric light-emitting diodes (PLEDs) have been fabricated with top emissive architecture and a shift of the light emission wavelength is observed for a single emitting material - phenyl-substituted poly(p-phenylenevinylene) (Ph-PPV). The device is built on a glass substrate and its structure consists of a bi-layer anode (including a high reflective metal thin film and indium tin oxide anode - ITO thin film), polymer stack and semitransparent multi-layer cathodes. Poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) (PEDOT: PSS) and Ph-PPV are employed as the hole transport layer and light-emitting layer, respectively. Changes in the electroluminescence (EL) characteristics of the PLEDs are examined by adjusting the ITO thickness. The EL peaks of the devices with a single emissive layer have a wide variation in the wavelength range, from 547 to 655 nm, due to the different ITO thicknesses.
| Original language | English |
|---|---|
| Pages (from-to) | 19-24 |
| Number of pages | 6 |
| Journal | Semiconductor Science and Technology |
| Volume | 21 |
| Issue number | 1 |
| Early online date | 22 Nov 2005 |
| DOIs | |
| Publication status | Published - Jan 2006 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry