Charge trapping and scattering by extrinsic gas dopants in tris(8-hydroxyquinoline) aluminum (Alq3)

H. H. Fong*, Shu Kong SO

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The effects of various ambient gases (N2, O2, H 2O) to the electron mobility of tris(8-hydroxyquinoline) aluminum, Alq3, were examined. For a clean Alq3, the electron transport is non-dispersive and essentially trap-free as revealed by optical time-of-flight measurements. At 295K, the electron mobility (μℓ) spans the range 0.2-1×10-6 cm2V-1s-1 when the field varies from 0.4-0.9 MV cm-1. Exposing the sample to oxygen dosages in the range 1-100 Torr-s does not cause any noticeable changes in μℓ. The effect of oxygen on μℓ, can be observed only at much higher oxygen dosages (>105 Torr.s). In contrast, exposing pristine Alq3 to moisture of same dosages causes a gradual reduction in μℓ by a factor of 4. It is proposed that oxygen diffuses into Alq 3 during exposure and subsequently acts as charge scattering centers for externally injected free electrons. On the other hand, water induces charge traps at high dosages. Moisture control appears to be the most critical factor for the long-term operation of Alq3-based organic light-emitting diodes.

Original languageEnglish
Pages (from-to)277-281
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume814
DOIs
Publication statusPublished - 2004
EventFlexible Electronics 2004 - Materials and Device Technology - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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