Charge motion and trapping in molecularly doped hole transporters

H. H. Fong*, K. C. Lun, Shu Kong SO

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


The charge transporting properties of N, N'-dipheny 1-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), TPD doped with 5,6,11,12- tetraphenylnaphthacene (rubrene), and TPD doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryle) 4H-pyran (DCM1) were examined by time-of-flight (TOF) technique between 180-300K. The dependence of the mobility on electric field and temperature for undoped and doped TPD was investigated. Reductions in hole mobility shows that both dopants act as hole traps in TPD. Computational results of TPD also account for the effective hole conduction in pristine TPD film.

Original languageEnglish
Pages (from-to)79-84
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Publication statusPublished - 2002
EventOrganic and Polymeric materials and Devices - Optical, Electrical and Optoelectronic Properties - San Francisco, CA, United States
Duration: 1 Apr 20025 Apr 2002

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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