Cation interdiffusion in GaInP/GaAs single quantum wells

Joseph Micallef*, Andrea Brincat, Wai Chee SHIU

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

The effects of cation interdiffusion in Ga0.51In0.49P/GaAs single quantum wells are investigated using an error function distribution to model the compositional profile after interdiffusion. Two interdiffusion conditions are considered: cation only interdiffusion, and dominant cation interdiffusion. For both conditions the fundamental absorption edge exhibits a red shift with interdiffusion, with a large strain build up taking place in the early stages of interdiffusion. In the case of cation only interdiffusion, an abrupt carrier confinement profile is maintained even after significant interdiffusion, with a well width equal to that of the as-grown quantum well. When the interdiffusion takes place on two sublattices, but with the cation interdiffusion dominant, the red shift saturates and then decreases. The model results are consistent with reported experimental results. The effects of the interdiffusion-induced strain on the carrier confinement profile can be of interest for device applications in this material system.

Original languageEnglish
Pages (from-to)441-446
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume484
DOIs
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: 1 Dec 19974 Dec 1997

Scopus Subject Areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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