Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films

H. I. Elim; W. Ji; F. Zhu

doi:10.1007/s00340-005-2079-8

Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films

H. I. Elim, W. Ji^*, F. Zhu

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

35 Citations (Scopus)

Abstract

Optical Kerr nonlinearity (n₂) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n₂-value of 4.1×10^-5 cm²/GW at 720-nm wavelength and an electron density of N _d=5.8×10²⁰ cm^-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.

Original language	English
Pages (from-to)	439-442
Number of pages	4
Journal	Applied Physics B: Lasers and Optics
Volume	82
Issue number	3
DOIs	https://doi.org/10.1007/s00340-005-2079-8
Publication status	Published - Mar 2006

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@article{668b039c94c2497081a8ca436bf8046e,

title = "Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films",

abstract = "Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron density of N d=5.8×1020 cm-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.",

author = "Elim, {H. I.} and W. Ji and F. Zhu",

year = "2006",

month = mar,

doi = "10.1007/s00340-005-2079-8",

language = "English",

volume = "82",

pages = "439--442",

journal = "Applied Physics B: Lasers and Optics",

issn = "0946-2171",

publisher = "Springer Verlag",

number = "3",

}

TY - JOUR

T1 - Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films

AU - Elim, H. I.

AU - Ji, W.

AU - Zhu, F.

PY - 2006/3

Y1 - 2006/3

N2 - Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron density of N d=5.8×1020 cm-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.

AB - Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron density of N d=5.8×1020 cm-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.

UR - http://www.scopus.com/inward/record.url?scp=32044456688&partnerID=8YFLogxK

U2 - 10.1007/s00340-005-2079-8

DO - 10.1007/s00340-005-2079-8

M3 - Journal article

AN - SCOPUS:32044456688

SN - 0946-2171

VL - 82

SP - 439

EP - 442

JO - Applied Physics B: Lasers and Optics

JF - Applied Physics B: Lasers and Optics

IS - 3

ER -

Carrier concentration dependence of optical Kerr nonlinearity in indium tin oxide films

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