Abstract
Optical Kerr nonlinearity (n2) in n-type indium tin oxide (ITO) films coated on glass substrates has been measured using Z-scans with 200-fs laser pulses at wavelengths ranging from 720 to 780 nm. The magnitudes of the measured nonlinearity in the ITO films were found to be dependent on the carrier concentration with a maximum n2-value of 4.1×10-5 cm2/GW at 720-nm wavelength and an electron density of N d=5.8×1020 cm-3. The Kerr nonlinearity was also observed to be varied with the laser wavelength. By employing a femtosecond time-resolved optical Kerr effect (OKE) technique, the relaxation time of OKE in the ITO films is determined to be ∼ 1 ps. These findings suggest that the Kerr nonlinearity in ITO can be tailored by controlling the carrier concentration, which should be highly desirable in optoelectronic devices for ultrafast all-optical switching.
Original language | English |
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Pages (from-to) | 439-442 |
Number of pages | 4 |
Journal | Applied Physics B: Lasers and Optics |
Volume | 82 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2006 |
Scopus Subject Areas
- Physics and Astronomy (miscellaneous)
- General Physics and Astronomy