Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination

M. Yang; T. P. Chen; L. Ding; Y. Liu; F. R. Zhu; S. Fung

doi:10.1063/1.3224191

Capacitance switching in SiO₂ thin film embedded with Ge nanocrystals caused by ultraviolet illumination

M. Yang, T. P. Chen^*, L. Ding, Y. Liu, F. R. Zhu, S. Fung

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

2 Citations (Scopus)

Abstract

A structure of indium tin oxide/ SiO₂ embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge.

Original language	English
Article number	091111
Number of pages	3
Journal	Applied Physics Letters
Volume	95
Issue number	9
DOIs	https://doi.org/10.1063/1.3224191
Publication status	Published - 31 Aug 2009

Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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@article{2f383c489cb348c7a657a4cb8e93a33d,

title = "Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination",

abstract = "A structure of indium tin oxide/ SiO2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge.",

author = "M. Yang and Chen, {T. P.} and L. Ding and Y. Liu and Zhu, {F. R.} and S. Fung",

note = "Funding Information: This work has been financially supported by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01. Y. Liu would like to acknowledge the National Natural Science Foundation of China (NSFC) under Project No. 60806040. Publisher copyright: {\textcopyright} 2009 American Institute of Physics.",

year = "2009",

month = aug,

day = "31",

doi = "10.1063/1.3224191",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination

AU - Yang, M.

AU - Chen, T. P.

AU - Ding, L.

AU - Liu, Y.

AU - Zhu, F. R.

AU - Fung, S.

N1 - Funding Information: This work has been financially supported by the National Research Foundation of Singapore under Project No. NRF-G-CRP 2007-01. Y. Liu would like to acknowledge the National Natural Science Foundation of China (NSFC) under Project No. 60806040. Publisher copyright: © 2009 American Institute of Physics.

PY - 2009/8/31

Y1 - 2009/8/31

N2 - A structure of indium tin oxide/ SiO2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge.

AB - A structure of indium tin oxide/ SiO2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge.

UR - http://www.scopus.com/inward/record.url?scp=69949142780&partnerID=8YFLogxK

U2 - 10.1063/1.3224191

DO - 10.1063/1.3224191

M3 - Journal article

AN - SCOPUS:69949142780

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 091111

ER -

Capacitance switching in SiO₂ thin film embedded with Ge nanocrystals caused by ultraviolet illumination

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