Abstract
The hole transport property of a widely used phosphorescent dye, tris(2-phenylpyridine) iridium or Ir(ppy)3 was investigated by thin film transistor (TFT) technique. The field effect (FE) mobility of Ir(ppy)3 was found to be 1.7 × 10-5 cm2 V-1s-1. This value is actually comparable to NPB and CBP, two popular hole transporting materials for fluorescent and phosphorescent organic light-emitting diodes (FOLED and POLED), respectively. In addition, temperature dependent measurements were carried out to study the energetic disorder (σ) of Ir(ppy)3. The extracted σ ∼ 88 meV is comparable to those of other common amorphous organic hole transporters, which are in the range of 80-90 meV. Our findings indicate that the dye can directly act as a hole transporting component in POLEDs. Crown
Original language | English |
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Pages (from-to) | 872-875 |
Number of pages | 4 |
Journal | Organic Electronics |
Volume | 11 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2010 |
Scopus Subject Areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
User-Defined Keywords
- Charge transport
- Organic light-emitting diodes
- Phosphorescent dye
- Thin film transistor