Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel

Ning Li; Yanlian Lei; Wing Kin Edward Chan; Fu Rong ZHU

doi:10.1039/c8tc06229c

Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel

Ning Li, Yanlian Lei, Wing Kin Edward Chan, Fu Rong ZHU^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

High performing ultraviolet (UV) to near infrared (NIR) light broadband phototransistors (PTs) are realised by incorporating a bi-layer methylammonium lead triiodide (MAPbI₃) perovskite/NIR light absorbing diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) polymer channel. The bi-layer MAPbI₃/DPP-DTT channel has the advantages of the (1) complementary absorption and (2) high charge transport efficiency of the two materials. The on- and off-state transfer characteristics of the bi-layer MAPbI₃/DPP-DTT channel PTs, in the presence of different intensities of UV, visible and NIR light, were analyzed. The bi-layer MAPbI₃/DPP-DTT channel PTs possess simultaneously a specific detectivity (D∗) of >10⁹ Jones over the UV to visible light wavelength range and a high D∗ of >10⁷ Jones over the NIR light wavelength range. The broadband PTs can be operated at a low voltage (-1 V) without showing persistent photoconductivity behavior. The results are very encouraging. It is anticipated that the bi-layer perovskite/NIR light absorbing polymer channel concept is a very promising approach for realising high performance UV to NIR light broadband PTs.

Original language	English
Pages (from-to)	4808-4816
Number of pages	9
Journal	Journal of Materials Chemistry C
Volume	7
Issue number	16
Early online date	22 Mar 2019
DOIs	https://doi.org/10.1039/c8tc06229c
Publication status	Published - 28 Apr 2019

Scopus Subject Areas

Chemistry(all)
Materials Chemistry

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title = "Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel",

abstract = "High performing ultraviolet (UV) to near infrared (NIR) light broadband phototransistors (PTs) are realised by incorporating a bi-layer methylammonium lead triiodide (MAPbI3) perovskite/NIR light absorbing diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) polymer channel. The bi-layer MAPbI3/DPP-DTT channel has the advantages of the (1) complementary absorption and (2) high charge transport efficiency of the two materials. The on- and off-state transfer characteristics of the bi-layer MAPbI3/DPP-DTT channel PTs, in the presence of different intensities of UV, visible and NIR light, were analyzed. The bi-layer MAPbI3/DPP-DTT channel PTs possess simultaneously a specific detectivity (D∗) of >109 Jones over the UV to visible light wavelength range and a high D∗ of >107 Jones over the NIR light wavelength range. The broadband PTs can be operated at a low voltage (-1 V) without showing persistent photoconductivity behavior. The results are very encouraging. It is anticipated that the bi-layer perovskite/NIR light absorbing polymer channel concept is a very promising approach for realising high performance UV to NIR light broadband PTs.",

author = "Ning Li and Yanlian Lei and Chan, {Wing Kin Edward} and ZHU, {Fu Rong}",

note = "Funding Information: This work was financially supported by the Research Grants Council of the Hong Kong Special Administrative Region, China, General Research Fund (GRF/12302817) and the Hong Kong Baptist University Inter-institutional Collaborative Research Scheme (RC-ICRS/15-16/04).",

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AU - Li, Ning

AU - Lei, Yanlian

AU - Chan, Wing Kin Edward

AU - ZHU, Fu Rong

N1 - Funding Information: This work was financially supported by the Research Grants Council of the Hong Kong Special Administrative Region, China, General Research Fund (GRF/12302817) and the Hong Kong Baptist University Inter-institutional Collaborative Research Scheme (RC-ICRS/15-16/04).

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Y1 - 2019/4/28

N2 - High performing ultraviolet (UV) to near infrared (NIR) light broadband phototransistors (PTs) are realised by incorporating a bi-layer methylammonium lead triiodide (MAPbI3) perovskite/NIR light absorbing diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) polymer channel. The bi-layer MAPbI3/DPP-DTT channel has the advantages of the (1) complementary absorption and (2) high charge transport efficiency of the two materials. The on- and off-state transfer characteristics of the bi-layer MAPbI3/DPP-DTT channel PTs, in the presence of different intensities of UV, visible and NIR light, were analyzed. The bi-layer MAPbI3/DPP-DTT channel PTs possess simultaneously a specific detectivity (D∗) of >109 Jones over the UV to visible light wavelength range and a high D∗ of >107 Jones over the NIR light wavelength range. The broadband PTs can be operated at a low voltage (-1 V) without showing persistent photoconductivity behavior. The results are very encouraging. It is anticipated that the bi-layer perovskite/NIR light absorbing polymer channel concept is a very promising approach for realising high performance UV to NIR light broadband PTs.

AB - High performing ultraviolet (UV) to near infrared (NIR) light broadband phototransistors (PTs) are realised by incorporating a bi-layer methylammonium lead triiodide (MAPbI3) perovskite/NIR light absorbing diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) polymer channel. The bi-layer MAPbI3/DPP-DTT channel has the advantages of the (1) complementary absorption and (2) high charge transport efficiency of the two materials. The on- and off-state transfer characteristics of the bi-layer MAPbI3/DPP-DTT channel PTs, in the presence of different intensities of UV, visible and NIR light, were analyzed. The bi-layer MAPbI3/DPP-DTT channel PTs possess simultaneously a specific detectivity (D∗) of >109 Jones over the UV to visible light wavelength range and a high D∗ of >107 Jones over the NIR light wavelength range. The broadband PTs can be operated at a low voltage (-1 V) without showing persistent photoconductivity behavior. The results are very encouraging. It is anticipated that the bi-layer perovskite/NIR light absorbing polymer channel concept is a very promising approach for realising high performance UV to NIR light broadband PTs.

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Broadband phototransistors realised by incorporating a bi-layer perovskite/NIR light absorbing polymer channel

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