Abstract
High performing ultraviolet (UV) to near infrared (NIR) light broadband phototransistors (PTs) are realised by incorporating a bi-layer methylammonium lead triiodide (MAPbI3) perovskite/NIR light absorbing diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (DPP-DTT) polymer channel. The bi-layer MAPbI3/DPP-DTT channel has the advantages of the (1) complementary absorption and (2) high charge transport efficiency of the two materials. The on- and off-state transfer characteristics of the bi-layer MAPbI3/DPP-DTT channel PTs, in the presence of different intensities of UV, visible and NIR light, were analyzed. The bi-layer MAPbI3/DPP-DTT channel PTs possess simultaneously a specific detectivity (D∗) of >109 Jones over the UV to visible light wavelength range and a high D∗ of >107 Jones over the NIR light wavelength range. The broadband PTs can be operated at a low voltage (-1 V) without showing persistent photoconductivity behavior. The results are very encouraging. It is anticipated that the bi-layer perovskite/NIR light absorbing polymer channel concept is a very promising approach for realising high performance UV to NIR light broadband PTs.
Original language | English |
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Pages (from-to) | 4808-4816 |
Number of pages | 9 |
Journal | Journal of Materials Chemistry C |
Volume | 7 |
Issue number | 16 |
Early online date | 22 Mar 2019 |
DOIs | |
Publication status | Published - 28 Apr 2019 |
Scopus Subject Areas
- Chemistry(all)
- Materials Chemistry