Ballistic regime and photoluminescence excitation in Si wires and dots

T. V. Torchynska*, M. Morales Rodríguez, A. Vivas Hernández, Kok Wai CHEAH

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


This article presents the experimental results supporting the role of the ballistic effect in strong "red" photoluminescence (PL) of silicon low-dimensional structures: wires and dots. The peculiarities of the PL and PL excitation spectra in dependence on the morphology of porous silicon layers and the size of Si nano-crystallites have been investigated. The porous silicon layers with different morphology were created by the variation of preparation regimes. The size of Si nano-crystallites is estimated using the atomic force microscopy and Raman scattering methods. The mechanisms of PL and PL excitation in Si low-dimensional structures are discussed as well.

Original languageEnglish
Pages (from-to)551-556
Number of pages6
JournalJournal of Luminescence
Issue numberSPEC
Publication statusPublished - May 2003
EventProceedings of the 2002 International Conference on Luminescence - Budapest, Hungary
Duration: 24 Aug 200229 Aug 2002

Scopus Subject Areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

User-Defined Keywords

  • Ballistic effect
  • Photoluminescence excitation
  • Porous silicon


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