Abstract
This article presents the experimental results supporting the role of the ballistic effect in strong "red" photoluminescence (PL) of silicon low-dimensional structures: wires and dots. The peculiarities of the PL and PL excitation spectra in dependence on the morphology of porous silicon layers and the size of Si nano-crystallites have been investigated. The porous silicon layers with different morphology were created by the variation of preparation regimes. The size of Si nano-crystallites is estimated using the atomic force microscopy and Raman scattering methods. The mechanisms of PL and PL excitation in Si low-dimensional structures are discussed as well.
Original language | English |
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Pages (from-to) | 551-556 |
Number of pages | 6 |
Journal | Journal of Luminescence |
Volume | 102-103 |
Issue number | SPEC |
DOIs | |
Publication status | Published - May 2003 |
Event | Proceedings of the 2002 International Conference on Luminescence - Budapest, Hungary Duration: 24 Aug 2002 → 29 Aug 2002 |
Scopus Subject Areas
- Biophysics
- Biochemistry
- General Chemistry
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
User-Defined Keywords
- Ballistic effect
- Photoluminescence excitation
- Porous silicon