Several different structures have been reported for the clean GaAs(110) surface as a result of LEED studies. The authors have compared their data to results of dynamical calculations and have determined that the best structure has the As atoms rotated outward with a tilt angle of 27 degree , a Ga to second layer spacing of 1. 452 A, and back bonds which are slightly contracted. Differences between this structure and previously reported structures are discussed. Present preliminary results of LEED studies on the bonding of an As monolayer to the GaAs(110) surface are also presented. It is found that the As atoms remove the reconstruction of the clean substrate and adsorb on sites which continue the bulk structure.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology|
|Publication status||Published - 1979|
|Event||Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA|
Duration: 30 Jan 1979 → 1 Feb 1979
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