Atomic Structure of Clean and Arsenic-Covered Gaas(110) Surfaces

B. J. Mrstik*, S. Y. Tong, M. A. Van Hove

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Citations (Scopus)

Abstract

Several different structures have been reported for the clean GaAs(110) surface as a result of LEED studies. The authors have compared their data to results of dynamical calculations and have determined that the best structure has the As atoms rotated outward with a tilt angle of 27 degree , a Ga to second layer spacing of 1. 452 A, and back bonds which are slightly contracted. Differences between this structure and previously reported structures are discussed. Present preliminary results of LEED studies on the bonding of an As monolayer to the GaAs(110) surface are also presented. It is found that the As atoms remove the reconstruction of the clean substrate and adsorb on sites which continue the bulk structure.

Original languageEnglish
Pages (from-to)1258-1261
Number of pages4
JournalJournal of Vacuum Science and Technology
Volume16
Issue number5
DOIs
Publication statusPublished - 1979
EventProc of the Annu Conf on the Phys of Compd Semicond Interfaces, 6th - Pacific Grove, CA, USA
Duration: 30 Jan 19791 Feb 1979

Scopus Subject Areas

  • Engineering(all)

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