An organic p-type dopant with high thermal stability for an organic semiconductor

Zhi Qiang Gao, Bao Xiu Mi*, Gui Zhen Xu, Yi Qian Wan, Meng Lian Gong, Kok Wai CHEAH, Chin H. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)

Abstract

To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.

Original languageEnglish
Pages (from-to)117-119
Number of pages3
JournalChemical Communications
Issue number1
DOIs
Publication statusPublished - 2008

Scopus Subject Areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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