An organic p-type dopant with high thermal stability for an organic semiconductor

Zhi Qiang Gao; Bao Xiu Mi; Gui Zhen Xu; Yi Qian Wan; Meng Lian Gong; Kok Wai Cheah; Chin H. Chen

doi:10.1039/b713566a

An organic p-type dopant with high thermal stability for an organic semiconductor

Zhi Qiang Gao
, Bao Xiu Mi^*
, Gui Zhen Xu
, Yi Qian Wan
, Meng Lian Gong
, Kok Wai Cheah
, Chin H. Chen

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › peer-review

78 Citations (Scopus)

Abstract

To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.

Original language	English
Pages (from-to)	117-119
Number of pages	3
Journal	Chemical Communications
Issue number	1
DOIs	https://doi.org/10.1039/b713566a
Publication status	Published - Jan 2008

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10.1039/b713566a

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title = "An organic p-type dopant with high thermal stability for an organic semiconductor",

abstract = "To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.",

author = "Gao, \{Zhi Qiang\} and Mi, \{Bao Xiu\} and Xu, \{Gui Zhen\} and Wan, \{Yi Qian\} and Gong, \{Meng Lian\} and Cheah, \{Kok Wai\} and Chen, \{Chin H.\}",

note = "Publisher copyright: {\textcopyright} The Royal Society of Chemistry 2008",

year = "2008",

month = jan,

doi = "10.1039/b713566a",

language = "English",

pages = "117--119",

journal = "Chemical Communications",

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publisher = "Royal Society of Chemistry",

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T1 - An organic p-type dopant with high thermal stability for an organic semiconductor

AU - Gao, Zhi Qiang

AU - Mi, Bao Xiu

AU - Xu, Gui Zhen

AU - Wan, Yi Qian

AU - Gong, Meng Lian

AU - Cheah, Kok Wai

AU - Chen, Chin H.

PY - 2008/1

Y1 - 2008/1

N2 - To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.

AB - To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.

UR - https://www.scopus.com/pages/publications/37249018158

U2 - 10.1039/b713566a

DO - 10.1039/b713566a

M3 - Journal article

AN - SCOPUS:37249018158

SN - 1359-7345

SP - 117

EP - 119

JO - Chemical Communications

JF - Chemical Communications

IS - 1

ER -

An organic p-type dopant with high thermal stability for an organic semiconductor

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