TY - JOUR
T1 - An organic p-type dopant with high thermal stability for an organic semiconductor
AU - Gao, Zhi Qiang
AU - Mi, Bao Xiu
AU - Xu, Gui Zhen
AU - Wan, Yi Qian
AU - Gong, Meng Lian
AU - Cheah, Kok Wai
AU - Chen, Chin H.
N1 - Publisher copyright:
© The Royal Society of Chemistry 2008
PY - 2008/1
Y1 - 2008/1
N2 - To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.
AB - To overcome the thermal instability of a p-doped organic hole transporting layer using the state-of-the-art p-type dopant, 2,3,5,6-tetrafluoro-7,7,8,8- tetracyanoquinodimethane, a potent electron accepter, 3,6-difluoro-2,5,7,7,8,8- hexacyanoquinodimethane, has been found to possess superior thermal stability and proved to be an excellent p-type dopant.
UR - http://www.scopus.com/inward/record.url?scp=37249018158&partnerID=8YFLogxK
U2 - 10.1039/b713566a
DO - 10.1039/b713566a
M3 - Journal article
AN - SCOPUS:37249018158
SN - 1359-7345
SP - 117
EP - 119
JO - Chemical Communications
JF - Chemical Communications
IS - 1
ER -