An approach to study the effect of the band tail widths on the photovoltaic performance of p-i-n a-Si: H solar cells

Furong Zhu; Jai Singh

doi:10.1016/0022-3093(93)90646-F

An approach to study the effect of the band tail widths on the photovoltaic performance of p-i-n a-Si: H solar cells

Furong Zhu
, Jai Singh^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Journal article › peer-review

8 Citations (Scopus)

Abstract

The relationship between band tail widths and photovoltaic performance of a p-i-n a-Si: H solar cell is investigated. It is found that the primary effect of the bandgap states is to increase the forward current of the cell and to reduce the voltage output. The influence of the bandgap states and cell thickness on the efficiency of an a-Si: H cell is also determined. An optimum design for a p-i-n type a-Si: H solar cell is discussed using the optical admittance analysis method.

Original language	English
Pages (from-to)	65-73
Number of pages	9
Journal	Journal of Non-Crystalline Solids
Volume	163
Issue number	1
DOIs	https://doi.org/10.1016/0022-3093(93)90646-F
Publication status	Published - Oct 1993

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abstract = "The relationship between band tail widths and photovoltaic performance of a p-i-n a-Si: H solar cell is investigated. It is found that the primary effect of the bandgap states is to increase the forward current of the cell and to reduce the voltage output. The influence of the bandgap states and cell thickness on the efficiency of an a-Si: H cell is also determined. An optimum design for a p-i-n type a-Si: H solar cell is discussed using the optical admittance analysis method.",

author = "Furong Zhu and Jai Singh",

note = "Publisher copyright: {\textcopyright} 1993 Published by Elsevier B.V.",

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Y1 - 1993/10

N2 - The relationship between band tail widths and photovoltaic performance of a p-i-n a-Si: H solar cell is investigated. It is found that the primary effect of the bandgap states is to increase the forward current of the cell and to reduce the voltage output. The influence of the bandgap states and cell thickness on the efficiency of an a-Si: H cell is also determined. An optimum design for a p-i-n type a-Si: H solar cell is discussed using the optical admittance analysis method.

AB - The relationship between band tail widths and photovoltaic performance of a p-i-n a-Si: H solar cell is investigated. It is found that the primary effect of the bandgap states is to increase the forward current of the cell and to reduce the voltage output. The influence of the bandgap states and cell thickness on the efficiency of an a-Si: H cell is also determined. An optimum design for a p-i-n type a-Si: H solar cell is discussed using the optical admittance analysis method.

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U2 - 10.1016/0022-3093(93)90646-F

DO - 10.1016/0022-3093(93)90646-F

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AN - SCOPUS:0027680388

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VL - 163

SP - 65

EP - 73

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1

ER -

An approach to study the effect of the band tail widths on the photovoltaic performance of p-i-n a-Si: H solar cells

Abstract

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